Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2206 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces a device with the power handling Low C and fast switching speeds ISS capabilities of bipolar transistors, and the high input impedance High input impedance and high gain and positive temperature coefficient inherent in MOS devices. Excellent thermal stability Characteristic of all MOS structures, this device is free from Integral source-to-drain diode thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide range Motor controls of switching and amplifying applications where very low threshold Converters voltage, high breakdown voltage, high input impedance, low Amplifiers input capacitance, and fast switching speeds are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Options Wafer / Die Options Device NW NJ ND TO-39 TO-92 (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) VP2206 VP2206N2 VP2206N3-G VP5206NW VP5206NJ VP5206ND For packaged products, -G indicates package is RoHS compliant (Green). TO-39 package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF52 for layout and dimensions. Product Summary Pin Configurations R I DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) () (A) DRAIN GATE VP2206N2 SOURCE -60 0.9 -4.0 SOURCE VP2206N3-G DRAIN GATE TO-39 (N2) TO-92 (N3) Absolute Maximum Ratings Product Marking Parameter Value VP Drain-to-source voltage BV DSS YY = Year Sealed 2206N2 WW = Week Sealed Drain-to-gate voltage BV YYWW DGS Gate-to-source voltage 20V Package may or may not include the following marks: Si or O O Operating and storage temperature -55 C to +150 C TO-39 (N2) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous SiVP YY = Year Sealed operation of the device at the absolute rating level may affect device reliability. All 2 206 WW = Week Sealed voltages are referenced to device ground. YYWW = Green Packaging Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VP2206 Thermal Characteristics I I Power Dissipation D D I I JC JA DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (A) (A) (A) (A) (W) TO-39 -0.75 -8.0 6.0 20.8 125 -0.75 -8.0 TO-92 -0.64 -4.0 1.0 125 170 -0.64 -4.0 Notes: I (continuous) is limited by max rated T . D J O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -60 - - V V = 0V, I = -10mA DSS GS D V Gate threshold voltage -1.0 - -3.5 V V = V , I = -10mA GS(th) GS DS D O V Change in V with temperature - -4.3 -5.5 mV/ C V = V , I = -10mA GS(th) GS(th) GS DS D I Gate body leakage - -1.0 -100 nA V = 20V, V = 0V GSS GS DS - - -50 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -10 mA V = 0V, T = 125C GS A -0.85 -2.0 - V = -5.0V, V = -25V GS DS I On-state drain current D(ON) -4.0 -9.0 - A V = -10V, V = -25V GS DS - 1.3 1.5 V = -5.0V, I = -1.0A GS D R Static drain-to-source on-state resistance DS(ON) - 0.75 0.9 V = -10V, I = -3.5A GS D O R Change in R with temperature - 0.85 1.2 %/ C V = -10V, I = -3.5A DS(ON) DS(ON) GS D G Forward transductance 800 1400 - mmho V = -25V, I = -2.0A FS DS D C Input capacitance - 325 450 ISS V = 0V, GS C Common source output capacitance - 125 180 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 30 40 RSS t Turn-on delay time - 4.0 15 d(ON) V = -25V, DD t Rise time - 16 25 r I = -4.0A, ns D t Turn-off delay time - 16 50 d(OFF) R = 10 GEN t Fall time - 22 50 f V Diode forward voltage drop - -1.1 -1.6 V V = 0V, I = -3.5A SD GS SD t Reverse recovery time - 500 - ns V = 0V, I = -1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R -10V GEN 90% t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) f INPUT Output 0V R 90% 90% L OUTPUT 10% 10% V DD VDD Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2