CZDM1003N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CZDM1003N is a MOSFET 3.0 Amp, 100 Volt silicon N-Channel enhancement- mode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low r , and low gate charge. DS(ON) MARKING: FULL PART NUMBER SOT-223 CASE APPLICATIONS: FEATURES: Motor control Low r DS(ON) Relay driver High current DC-DC converters Low gate charge MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current (Steady State) I 3.0 A D Maximum Pulsed Drain Current, tp=10s I 12 A DM Power Dissipation P 2.0 W D Operating and Storage Junction Temperature T , T -55 to +150 C J stg Thermal Resistance 62.5 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =20V, V=0 100 nA GSSF GSSR GS DS I V =100V, V=0 1.0 A DSS DS GS BV V =0, I=250A 100 V DSS GS D V V =V , I=250A 2.0 4.0 V GS(th) GS DS D V V =0, I=3.0A 1.3 V SD GS S r V =10V, I=2.0A 70 150 m DS(ON) GS D C V =25V, V =0, f=1.0MHz 55 70 pF rss DS GS C V =25V, V =0, f=1.0MHz 705 975 pF iss DS GS C V =25V, V =0, f=1.0MHz 55 80 pF oss DS GS Q V =80V, V =10V, I=9.2A 15 nC g(tot) DS GS D Q V =80V, V =10V, I=9.2A 3.0 nC gs DS GS D Q V =80V, V =10V, I=9.2A 5.5 nC gd DS GS D t V =50V, V =10V, I=9.2A 40 80 ns on DD GS D t R=18 60 155 ns off G R1 (21-January 2013)CZDM1003N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-223 CASE - MECHANICAL OUTLINE 4 12 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source 4) Drain MARKING: FULL PART NUMBER R1 (21-January 2013) www.centralsemi.com