X-On Electronics has gained recognition as a prominent supplier of VP0550N3-G-P013 MOSFETs across the USA, India, Europe, Australia, and various other global locations. VP0550N3-G-P013 MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VP0550N3-G-P013 Microchip

VP0550N3-G-P013 electronic component of Microchip
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Part No.VP0550N3-G-P013
Manufacturer: Microchip
Category: MOSFETs
Description: Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
Datasheet: VP0550N3-G-P013 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 1.705 ea
Line Total: USD 3410 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 1.705

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the VP0550N3-G-P013 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VP0550N3-G-P013 and other electronic components in the MOSFETs category and beyond.

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Supertex inc. VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex VP0550 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces a device with the power handling Low C and fast switching speeds ISS capabilities of bipolar transistors, and the high input impedance High input impedance and high gain and positive temperature coefficient inherent in MOS devices. Excellent thermal stability Characteristic of all MOS structures, this device is free from Integral source-to-drain diode thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide Motor controls range of switching and amplifying applications where very Converters low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds Amplifiers are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Wafer / Die Options Device NW NJ ND TO-92 (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) VP0550 VP0550N3-G VP1550NW VP1550NJ VP1550ND For packaged products, -G indicates package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF15 for layout and dimensions. Product Summary Pin Configuration R I DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) () (mA) DRAIN VP0550N3-G -500 125 -100 SOURCE Absolute Maximum Ratings GATE Parameter Value TO-92 (N3) Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V SiVP YY = Year Sealed Operating and storage temperature -55C to +150C 0550 WW = Week Sealed YYWW Absolute Maximum Ratings are those values beyond which damage to the = Green Packaging device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect Package may or may not include the following marks: Si or device reliability. All voltages are referenced to device ground. TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VP0550 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-92 -54 -250 1.0 125 170 -54 -250 Notes: I (continuous) is limited by max rated T . D j Electrical Characteristics (T = 25C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -500 - - V V = 0V, I = -1.0mA DSS GS D V Gate threshold voltage -2.0 - -4.5 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - 3.5 6.0 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - - -100 nA V = 20V, V = 0V GSS GS DS - - -10 V = 0V, V = Max Rating GS DS I Zero gate voltage drain current A V = 0.8 Max Rating, DSS DS - - -1000 O V = 0V, T = 125 C GS A - -90 - V = -5.0V, V = -25V GS DS I On-state drain current mA D(ON) -100 -240 - V = -10V, V = -25V GS DS - 85 - V = -5.0V, I = -5mA Static drain-to-source on-state resis- GS D R DS(ON) tance - 80 125 V = -10V, I = -10mA GS D O R Change in R with temperature - 0.85 - %/ C V = -10V, I = -10mA DS(ON) DS(ON) GS D G Forward transconductance 25 40 - mmho V = -25V, I = -10mA FS DS D C Input capacitance - 40 70 ISS V = 0V, GS C Common source output capacitance - 10 20 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 10 RSS t Turn-on delay time - 5.0 10 d(ON) V = -25V, t Rise time - 8.0 10 DD r ns I = -100mA, D t Turn-off delay time - 8.0 15 d(OFF) R = 25 GEN t Fall time - 5.0 16 f V Diode forward voltage drop - -0.8 -1.5 V V = 0V, I = -0.1A SD GS SD t Reverse recovery time - 200 - ns V = 0V, I = -0.1A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R -10V 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) f INPUT Output 0V R 90% 90% L OUTPUT 10% 10% V DD VDD Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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