Supertex inc. VP0550 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex VP0550 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces a device with the power handling Low C and fast switching speeds ISS capabilities of bipolar transistors, and the high input impedance High input impedance and high gain and positive temperature coefficient inherent in MOS devices. Excellent thermal stability Characteristic of all MOS structures, this device is free from Integral source-to-drain diode thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide Motor controls range of switching and amplifying applications where very Converters low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds Amplifiers are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Wafer / Die Options Device NW NJ ND TO-92 (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) VP0550 VP0550N3-G VP1550NW VP1550NJ VP1550ND For packaged products, -G indicates package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF15 for layout and dimensions. Product Summary Pin Configuration R I DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) () (mA) DRAIN VP0550N3-G -500 125 -100 SOURCE Absolute Maximum Ratings GATE Parameter Value TO-92 (N3) Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V SiVP YY = Year Sealed Operating and storage temperature -55C to +150C 0550 WW = Week Sealed YYWW Absolute Maximum Ratings are those values beyond which damage to the = Green Packaging device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect Package may or may not include the following marks: Si or device reliability. All voltages are referenced to device ground. TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VP0550 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-92 -54 -250 1.0 125 170 -54 -250 Notes: I (continuous) is limited by max rated T . D j Electrical Characteristics (T = 25C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -500 - - V V = 0V, I = -1.0mA DSS GS D V Gate threshold voltage -2.0 - -4.5 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - 3.5 6.0 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - - -100 nA V = 20V, V = 0V GSS GS DS - - -10 V = 0V, V = Max Rating GS DS I Zero gate voltage drain current A V = 0.8 Max Rating, DSS DS - - -1000 O V = 0V, T = 125 C GS A - -90 - V = -5.0V, V = -25V GS DS I On-state drain current mA D(ON) -100 -240 - V = -10V, V = -25V GS DS - 85 - V = -5.0V, I = -5mA Static drain-to-source on-state resis- GS D R DS(ON) tance - 80 125 V = -10V, I = -10mA GS D O R Change in R with temperature - 0.85 - %/ C V = -10V, I = -10mA DS(ON) DS(ON) GS D G Forward transconductance 25 40 - mmho V = -25V, I = -10mA FS DS D C Input capacitance - 40 70 ISS V = 0V, GS C Common source output capacitance - 10 20 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 10 RSS t Turn-on delay time - 5.0 10 d(ON) V = -25V, t Rise time - 8.0 10 DD r ns I = -100mA, D t Turn-off delay time - 8.0 15 d(OFF) R = 25 GEN t Fall time - 5.0 16 f V Diode forward voltage drop - -0.8 -1.5 V V = 0V, I = -0.1A SD GS SD t Reverse recovery time - 200 - ns V = 0V, I = -0.1A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R -10V 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) f INPUT Output 0V R 90% 90% L OUTPUT 10% 10% V DD VDD Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2