X-On Electronics has gained recognition as a prominent supplier of VP0104N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. VP0104N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VP0104N3-G Microchip

VP0104N3-G electronic component of Microchip
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See Product Specifications
Part No.VP0104N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -40V; -0.5A; 1W; TO92
Datasheet: VP0104N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0028 ea
Line Total: USD 1 
Availability - 1205
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 50
Multiples : 50
50 : USD 1.0825
250 : USD 0.9662
1000 : USD 0.9513
3000 : USD 0.9413
5000 : USD 0.9325
8000 : USD 0.9225
10000 : USD 0.9138
15000 : USD 0.905

1205
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0028
25 : USD 0.8556
100 : USD 0.7889

619
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.176
5 : USD 1.064
21 : USD 0.8652
56 : USD 0.8176

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the VP0104N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VP0104N3-G and other electronic components in the MOSFETs category and beyond.

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Supertex inc. VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex VP0104 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Low power drive requirement Supertexs well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces a device with the power handling Low C and fast switching speeds ISS capabilities of bipolar transistors, and the high input impedance High input impedance and high gain and positive temperature coefficient inherent in MOS devices. Excellent thermal stability Characteristic of all MOS structures, this device is free from Integral source-to-drain diode thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide Motor controls range of switching and amplifying applications where very Converters low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds Amplifiers are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Wafer / Die Options Device NW NJ ND TO-92 (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) VP0104 VP0104N3-G VP1504NW VP1504NJ VP1504ND For packaged products, -G indicates package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF15 for layout and dimensions. Product Summary Pin Configuration R I DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) () (mA) DRAIN VP0104N3-G -40 8.0 -500 SOURCE Absolute Maximum Ratings GATE Parameter Value TO-92 (N3) Drain-to-source voltage BV DSS Product Marking Drain-to-gate voltage BV DGS Gate-to-source voltage 20V SiVP YY = Year Sealed 0104 WW = Week Sealed Operating and storage temperature -55C to +150C YYWW = Green Packaging Absolute Maximum Ratings are those values beyond which damage to the Package may or may not include the following marks: Si or device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect TO-92 (N3) device reliability. All voltages are referenced to device ground. Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VP0104 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-92 -250 -800 1.0 125 170 -250 -800 Notes: I (continuous) is limited by max rated T . D j Electrical Characteristics (T = 25C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -40 - - V V = 0V, I = -1.0mA DSS GS D V Gate threshold voltage -1.5 - -3.5 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - 5.8 6.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - -1.0 -100 nA V = 20V, V = 0V GSS GS DS - - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA O V = 0V, T = 125 C GS A -0.15 -0.25 - V = -5.0V, V = -25V GS DS I On-state drain current A D(ON) -0.5 -1.2 - V = -10V, V = -25V GS DS - 11 15 V = -5.0V, I = -100mA Static drain-to-source GS D R DS(ON) on-state resistance - 6.0 8.0 V = -10V, I = -500mA GS D O R Change in R with temperature - 0.55 1.0 %/ C V = -10V, I = -500mA DS(ON) DS(ON) GS D G Forward transconductance 150 190 - mmho V = -25V, I = -500mA FS DS D C Input capacitance - 45 60 ISS V = 0V, GS C Common source output capacitance - 22 30 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 3.0 8.0 RSS t Turn-on delay time - 4.0 6.0 d(ON) V = -25V, t Rise time - 3.0 10 DD r ns I = -500mA, D t Turn-off delay time - 8.0 12 d(OFF) R = 25 GEN t Fall time - 4.0 10 f V Diode forward voltage drop - -1.2 -2.0 V V = 0V, I = -1.0A SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = -1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R -10V 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) f INPUT Output 0V R 90% 90% L OUTPUT 10% 10% V DD VDD Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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