X-On Electronics has gained recognition as a prominent supplier of VN2460N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. VN2460N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VN2460N3-G Microchip

VN2460N3-G electronic component of Microchip
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See Product Specifications
Part No.VN2460N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 0.25A; 1W; TO92
Datasheet: VN2460N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.408 ea
Line Total: USD 1.41 
Availability - 798
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
727
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 25
25 : USD 1.5375
250 : USD 1.3875
500 : USD 1.3625
1000 : USD 1.3375
3000 : USD 1.325
5000 : USD 1.3
8000 : USD 1.2875
10000 : USD 1.2625

798
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.408
100 : USD 1.188
500 : USD 1.0934

141
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.786
5 : USD 2.562
8 : USD 2.142
22 : USD 2.016
100 : USD 1.974

141
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 36
Multiples : 1
36 : USD 2.7773

727
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 25
50 : USD 2.0787
250 : USD 1.8759
500 : USD 1.8421
1000 : USD 1.8083
3000 : USD 1.7914

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VN2460N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VN2460N3-G and other electronic components in the MOSFETs category and beyond.

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VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a Low power drive requirement vertical DMOS structure and Supertexs well-proven silicon-gate Ease of paralleling manufacturing process. This combination produces a device with Low C and fast switching speeds ISS the power handling capabilities of bipolar transistors and with Excellent thermal stability the high input impedance and positive temperature coefcient Integral source-drain diode inherent in MOS devices. Characteristic of all MOS structures, High input impedance and high gain this device is free from thermal runaway and thermally induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide range Motor controls Converters of switching and amplifying applications where high breakdown Ampliers voltage, high input impedance, low input capacitance, and fast Switches switching speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Options R I DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) TO-243AA (V) TO-92 () (mA) (SOT-89) VN2460 VN2460N3-G VN2460N8-G 600 20 250 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN DRAIN SOURCE Absolute Maximum Ratings SOURCE DRAIN GATE Parameter Value GATE TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSS Product Marking Drain-to-gate voltage BV DGS S i V N YY = Year Sealed Gate-to-source voltage 20V 2 4 6 0 WW = Week Sealed Y Y W W = Green Packaging Operating and storage temperature -55C to +150C * Package may or may not include the following marks: Si or Soldering temperature +300C TO-92 (N3) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous W = Code for week sealed operation of the device at the absolute rating level may affect device reliability. All V N 4 F W = Green Packaging voltages are referenced to device ground. Package may or may not include the following marks: Si or * Distance of 1.6mm from case for 10 seconds. TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVN2460 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM * O Package (continuous) (pulsed) T = 25 C O O A ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-92 160 500 0.74 125 170 160 500 TO-243AA 200 600 1.6 15 78 200 600 Notes: I (continuous) is limited by max rated T , D J Mounted on FR5 board, 25mm x 25mm x 1.57mm. (T = 25C unless otherwise specied) Electrical Characteristics A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 600 - - V V = 0V, I = 2.0mA DSS GS D V Gate threshold voltage 1.5 - 4.0 V V = V , I = 2.0mA GS(th) GS DS D O V Change in V with temperature - - -5.5 mV/ C V = V , I = 2.0mA GS(th) GS(th) GS DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS V = 0V, GS - - 10 A V = Max Rating DS I Zero gate voltage drain current DSS V = 0.8 Max Rating, DS - - 1.0 mA O V = 0V, T = 125 C GS A I On-state drain current 0.25 - - A V = 10V, V = 25V D(ON) GS DS - - 25 V = 4.5V, I = 100mA GS D R Static drain-to-source on-state resistance DS(ON) - - 20 V = 10V, I = 100mA GS D O R Change in R with temperature - - 1.7 %/ C V = 10V, I = 100mA DS(ON) DS(ON) GS D G Forward transconductance 50 - - mmho V = 25V, I = 100mA FS DS D C Input capacitance - - 150 ISS V = 0V, GS C Common source output capacitance - - 50 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 25 RSS t Turn-on delay time - - 10 d(ON) V = 25V, t Rise time - - 10 DD r ns I = 250mA, D t Turn-off delay time - - 25 d(OFF) R = 25 GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.5 V V = 0V, I = 400mA SD GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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