VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a Low power drive requirement vertical DMOS structure and Supertexs well-proven silicon-gate Ease of paralleling manufacturing process. This combination produces a device with Low C and fast switching speeds ISS the power handling capabilities of bipolar transistors and with Excellent thermal stability the high input impedance and positive temperature coefcient Integral source-drain diode inherent in MOS devices. Characteristic of all MOS structures, High input impedance and high gain this device is free from thermal runaway and thermally induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide range Motor controls Converters of switching and amplifying applications where high breakdown Ampliers voltage, high input impedance, low input capacitance, and fast Switches switching speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Options R I DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) TO-243AA (V) TO-92 () (mA) (SOT-89) VN2460 VN2460N3-G VN2460N8-G 600 20 250 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN DRAIN SOURCE Absolute Maximum Ratings SOURCE DRAIN GATE Parameter Value GATE TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSS Product Marking Drain-to-gate voltage BV DGS S i V N YY = Year Sealed Gate-to-source voltage 20V 2 4 6 0 WW = Week Sealed Y Y W W = Green Packaging Operating and storage temperature -55C to +150C * Package may or may not include the following marks: Si or Soldering temperature +300C TO-92 (N3) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous W = Code for week sealed operation of the device at the absolute rating level may affect device reliability. All V N 4 F W = Green Packaging voltages are referenced to device ground. Package may or may not include the following marks: Si or * Distance of 1.6mm from case for 10 seconds. TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVN2460 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM * O Package (continuous) (pulsed) T = 25 C O O A ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-92 160 500 0.74 125 170 160 500 TO-243AA 200 600 1.6 15 78 200 600 Notes: I (continuous) is limited by max rated T , D J Mounted on FR5 board, 25mm x 25mm x 1.57mm. (T = 25C unless otherwise specied) Electrical Characteristics A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 600 - - V V = 0V, I = 2.0mA DSS GS D V Gate threshold voltage 1.5 - 4.0 V V = V , I = 2.0mA GS(th) GS DS D O V Change in V with temperature - - -5.5 mV/ C V = V , I = 2.0mA GS(th) GS(th) GS DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS V = 0V, GS - - 10 A V = Max Rating DS I Zero gate voltage drain current DSS V = 0.8 Max Rating, DS - - 1.0 mA O V = 0V, T = 125 C GS A I On-state drain current 0.25 - - A V = 10V, V = 25V D(ON) GS DS - - 25 V = 4.5V, I = 100mA GS D R Static drain-to-source on-state resistance DS(ON) - - 20 V = 10V, I = 100mA GS D O R Change in R with temperature - - 1.7 %/ C V = 10V, I = 100mA DS(ON) DS(ON) GS D G Forward transconductance 50 - - mmho V = 25V, I = 100mA FS DS D C Input capacitance - - 150 ISS V = 0V, GS C Common source output capacitance - - 50 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 25 RSS t Turn-on delay time - - 10 d(ON) V = 25V, t Rise time - - 10 DD r ns I = 250mA, D t Turn-off delay time - - 25 d(OFF) R = 25 GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.5 V V = 0V, I = 400mA SD GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2