3LN01C-TB-E ON Semiconductor

LOT No. LOT No. Ordering number : EN6260C 3LN01C N-Channel Small Signal MOSFET 3LN01C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =100A 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =80mA 0.15 0.22 S DS D R (on)1 I =80mA, V =4V 2.9 3.7 DS D GS Static Drain to Source On-State Resistance R (on)2 I =40mA, V =2.5V 3.7 5.2 DS D GS R (on)3 I =10mA, V =1.5V 6.4 12.8 DS D GS Input Capacitance Ciss 7.0 pF Output Capacitance Coss V =10V, f=1MHz 5.9 pF DS Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 65 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 155 ns d Fall Time t 120 ns f Total Gate Charge Qg 1.58 nC Gate to Source Charge Qgs V =10V, V =10V, I =150mA 0.26 nC DS GS D Gate to Drain Miller Charge Qgd 0.31 nC Diode Forward Voltage V I =150mA, V =0V 0.87 1.2 V SD S GS Switching Time Test Circuit V =15V DD V IN 4V 0V I =80mA D V IN R =187.5 L PW=10 s D V OUT D.C.1% G 3LN01C P.G 50 S No.6260-2/6