3LN01M Small Signal MOSFET www.onsemi.com 30V, 3.7 , 0.15A, Single N-Channel Features Electrical Connection N-Channel Low ON-Resistance Ultrahigh-Speed Switching 3 1.5V Drive Halogen Free Compliance Specifications 1 Absolute Maximum Ratings at Ta = 25C 1:Gate Parameter Symbol Value Unit 2:Source Drain to Source Voltage V 30V 3:Drain 2 DSS Gate to Source Voltage V 10 V GSS A Drain Current (DC) I 0.15 D Drain Current (Pulse) A I 0.6 DP PW10s, duty cycle1% Packing Type:TL Marking Power Disspation P 0.15W D Junction Temperature Tj 150 C C Storage Temperature Tstg 55 to +150 LOTNo. This product is designed to ESD immunity < 200V*, so please take care when handling. YA * Machine Model LOTNo. TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I =100A 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=80mA 0.15 0.22 S FS DS D Continued on next page. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number : November 2014 - Rev. 1 3LN01M/D 3LN01M Continued from preceding page. Value Parameter Symbol Conditions Unit min typ max R(on)1 I =80mA, V=4V 2.9 3.7 DS D GS Static Drain to Source On-State Resistance R(on)2 I =40mA, V=2.5V 3.7 5.2 DS D GS R(on)3 I =10mA, V=1.5V 6.4 12.8 DS D GS Input Capacitance Ciss 7.0 pF Output Capacitance Coss V =10V, f=1MHz 5.9 pF DS Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 65 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 155 ns d Fall Time t 120 ns f Total Gate Charge Qg 1.58 nC Gate to Source Charge Qgs V =10V, V =10V, I =150mA 0.26 nC DS GS D Gate to Drain Miller Charge Qgd 0.31 nC Forward Diode Voltage V I =150mA, V=0V 0.87 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =15V DD V IN 4V 0V I =80mA D V IN R =184.6 L PW=10s D V OUT D.C.1% G 3LN01M P.G 50 S www.onsemi.com 2