X-On Electronics has gained recognition as a prominent supplier of 3LN01M-TL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 3LN01M-TL-E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

3LN01M-TL-E ON Semiconductor

3LN01M-TL-E electronic component of ON Semiconductor
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See Product Specifications
Part No.3LN01M-TL-E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET Small Signal MOSFET, 30V, 3.7O, 0.15A, Single N-Channel
Datasheet: 3LN01M-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 6000
Multiples : 6000
6000 : USD 0.1169
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6742
10 : USD 0.4743
100 : USD 0.3116
500 : USD 0.1842
1000 : USD 0.1416
N/A

Obsolete
0
MOQ : 4579
Multiples : 4579
4579 : USD 0.0948
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.4404
10 : USD 0.3032
100 : USD 0.1394
1000 : USD 0.1073
3000 : USD 0.092
9000 : USD 0.0883
24000 : USD 0.0833
45000 : USD 0.0821
99000 : USD 0.0796
N/A

Obsolete
0
MOQ : 6000
Multiples : 3000
6000 : USD 0.1007
9000 : USD 0.0925
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the 3LN01M-TL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 3LN01M-TL-E and other electronic components in the MOSFETs category and beyond.

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3LN01M Small Signal MOSFET www.onsemi.com 30V, 3.7 , 0.15A, Single N-Channel Features Electrical Connection N-Channel Low ON-Resistance Ultrahigh-Speed Switching 3 1.5V Drive Halogen Free Compliance Specifications 1 Absolute Maximum Ratings at Ta = 25C 1:Gate Parameter Symbol Value Unit 2:Source Drain to Source Voltage V 30V 3:Drain 2 DSS Gate to Source Voltage V 10 V GSS A Drain Current (DC) I 0.15 D Drain Current (Pulse) A I 0.6 DP PW10s, duty cycle1% Packing Type:TL Marking Power Disspation P 0.15W D Junction Temperature Tj 150 C C Storage Temperature Tstg 55 to +150 LOTNo. This product is designed to ESD immunity < 200V*, so please take care when handling. YA * Machine Model LOTNo. TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I =100A 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=80mA 0.15 0.22 S FS DS D Continued on next page. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number : November 2014 - Rev. 1 3LN01M/D 3LN01M Continued from preceding page. Value Parameter Symbol Conditions Unit min typ max R(on)1 I =80mA, V=4V 2.9 3.7 DS D GS Static Drain to Source On-State Resistance R(on)2 I =40mA, V=2.5V 3.7 5.2 DS D GS R(on)3 I =10mA, V=1.5V 6.4 12.8 DS D GS Input Capacitance Ciss 7.0 pF Output Capacitance Coss V =10V, f=1MHz 5.9 pF DS Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 65 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 155 ns d Fall Time t 120 ns f Total Gate Charge Qg 1.58 nC Gate to Source Charge Qgs V =10V, V =10V, I =150mA 0.26 nC DS GS D Gate to Drain Miller Charge Qgd 0.31 nC Forward Diode Voltage V I =150mA, V=0V 0.87 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =15V DD V IN 4V 0V I =80mA D V IN R =184.6 L PW=10s D V OUT D.C.1% G 3LN01M P.G 50 S www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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