X-On Electronics has gained recognition as a prominent supplier of TC6320TG-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TC6320TG-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TC6320TG-G Microchip

TC6320TG-G electronic component of Microchip
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See Product Specifications
Part No.TC6320TG-G
Manufacturer: Microchip
Category: MOSFETs
Description: Dual MOSFET - N and P Channel - 200 V - 7 ohm - 10 V - 2 V.
Datasheet: TC6320TG-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
250: USD 1.6625 ea
Line Total: USD 415.62 
Availability - 3832
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 250  Multiples: 1
Pack Size: 1
Availability Price Quantity
3832
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 250
Multiples : 1
250 : USD 1.6625
500 : USD 1.6375
1000 : USD 1.6125
3300 : USD 1.5875
6600 : USD 1.575
9900 : USD 1.55
13200 : USD 1.525

713
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 2.0761
10 : USD 2.0631
25 : USD 2.0267
100 : USD 1.9903
250 : USD 1.9539
500 : USD 1.9175

56
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 3.8379
10 : USD 3.3673
30 : USD 3.0876
100 : USD 2.7637
500 : USD 2.6326
1000 : USD 2.5746

3637
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 250
Multiples : 250
250 : USD 2.2477
500 : USD 2.2139
1000 : USD 2.1801
3500 : USD 2.1463
6750 : USD 2.1294

713
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4
Multiples : 1
4 : USD 2.0761
10 : USD 2.0631
25 : USD 2.0267
100 : USD 1.9903
250 : USD 1.9539
500 : USD 1.9175

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Number of Channels
Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Rds On
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Rise Time
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Typical Turn-Off Delay Time
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We are delighted to provide the TC6320TG-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TC6320TG-G and other electronic components in the MOSFETs category and beyond.

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Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description Integrated GATE-to-SOURCE resistor The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN Integrated GATE-to-SOURCE Zener diode packages. Both MOSFETs have integrated GATE-to-SOURCE Low threshold resistors and GATE-to-SOURCE Zener diode clamps which are Low on-resistance desired for high voltage pulser applications. It is a complimentary, Low input capacitance high-speed, high voltage, GATE-clamped N- and P-channel Fast switching speeds MOSFET pair, which utilizes an advanced vertical DMOS Free from secondary breakdown structure and Supertexs well-proven silicon-gate manufacturing Low input and output leakage process. This combination produces a device with the power Independent, electrically isolated N- and handling capabilities of bipolar transistors and with the high P-channels input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device Applications is free from thermal runaway and thermally induced secondary High voltage pulsers breakdown. Amplifiers Buffers Supertexs vertical DMOS FETs are ideally suited to a wide range Piezoelectric transducer drivers of switching and amplifying applications where very low threshold General purpose line drivers voltage, high breakdown voltage, high input impedance, low Logic level interfaces input capacitance, and fast switching speeds are desired. Typical Application Circuit +100V VH VDD OE 10nF INA INB 10nF -100V VL VSS Supertex Supertex MD12xx, MD17xx, or MD18xx TC6320 Doc. DSFP-TC6320 Supertex inc. D011513 www.supertex.comTC6320 Ordering Information Product Summary Part Number Package Option Packing BV /BV R DSS DGS DS(ON) (V) (typ) () TC6320K6-G 8-Lead DFN (4x4) 3000/Reel N-Channel P-Channel N-Channel P-Channel TC6320TG-G 8-Lead SOIC 2000/Reel -G indicates package is RoHS compliant (Green) 500 -500 16 25 Pin Configurations 1 8 SN DN DN Absolute Maximum Ratings 2 GN 7 DN Parameter Value SP 3 6 DP DRAIN-to-SOURCE voltage BV DP DSS GP 4 5 DP DRAIN-to-GATE voltage BV DGS Operating and storage temperature -55C to +150C 8-Lead DFN Absolute Maximum Ratings are those values beyond which damage to the (top view) device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. S1 1 8 D1 Typical Thermal Resistance G1 2 7 D1 Package N-Channel ja O 8-Lead DFN 44 C/W S2 3 6 D2 O 8-Lead SOIC 101 C/W Note: G2 4 5 D2 1.0oz, 4-layer, 3x4 PCB P-Channel 8-Lead SOIC (top view) Package Marking Y = Last Digit of Year Sealed 6320 W = Code for Week Sealed YWLL L = Lot Number = Green Packaging Package may or may not include the following marks: Si or 8-Lead DFN YY = Year Sealed YYWW WW = Week Sealed C6320 L = Lot Number LLLL = Green Packaging Package may or may not include the following marks: Si or 8-Lead SOIC Doc. DSFP-TC6320 Supertex inc. D011513 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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