BUZ80 STMicroelectronics

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH MOSFET General features V DSS Type R I DS(on) D ( Tjmax) 3 2 STP4NK80Z 800 V < 3.5 3 A 1 STP4NK80ZFP 800 V < 3.5 3 A TO-220 TO-220FP STD4NK80Z 800 V < 3.5 3 A STD4NK80Z-1 800 V < 3.5 3 A Extremely high dv/dt capability 3 3 2 1 1 100% avalanche tested DPAK IPAK Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility Internal schematic diagram Description The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications Switching application Order codes Part number Marking Package Packaging STP4NK80Z P4NK80Z TO-220 Tube STP4NK80ZFP P4NK80ZFP TO-220FP Tube STD4NK80ZT4 D4NK80Z DPAK Tape & reel STD4NK80Z-1 D4NK80Z IPAK Tube August 2006 Rev 8 1/18 www.st.com 18Contents STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Contents 1 Electrical ratings 3 1.1 Protection features of gate-to-source zener diodes 4 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuit . 10 4 Package mechanical data 11 5 Packaging mechanical data 16 6 Revision history . 17 2/18