BTA08, BTB08, T810, T835, T850 Snubberless, logic level and standard 8 A Triacs Datasheet - production data Features On-state rms current, I 8 A T(RMS) Repetitive peak off-state voltage, V / DRM VRRM 600 V to 800 V Triggering gate current, I 5 to 50 mA GT (Q1) Description Available either in through-hole and surface- mount packages, these devices are suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase control operation in light dimmers and motor speed controllers, etc. The Snubberless versions (BTA, BTB08 xxxxW and T8 series) are specially recommended for use on inductive loads, thanks to their high commutation performance. Logic level versions are designed to interface directly with low power drivers such as Microcontrollers. By using an internal ceramic pad, the BTA series provide voltage insulated tab (rated at 2500 V ) RMS in compliance with UL standards (file ref.: E81734). April 2017 DocID7472 Rev 12 1/18 www.st.com This is information on a product in full production. Characteristics BTA08, BTB08, T810, T835, T850 1 Characteristics Table 1: Absolute maximum ratings (Tj = 25 C unless otherwise stated) Symbol Parameter Value Unit IPAK, DPAK, TO-220AB, Tc = 110 C RMS on-state current I 8 A T(RMS) DPAK (full sine wave) TO-220ABIns. T = 100 C c Non repetitive surge peak f = 50 Hz t = 20 ms 80 ITSM on-state current A f = 60 Hz t = 16.7 ms 84 p (full cycle, Tj initial = 25 C) 2 2 2 I t I t value for fusing t = 10 ms 36 A s p Critical rate of rise of on-state dl/dt f = 120 Hz T = 125 C 50 A/s j current IG = 2 x IGT, tr 100 ns I Peak gate current t = 20 s T = 125 C 4 A GM p j PG(AV) Average gate power dissipation Tj = 125 C 1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +125 C Table 2: Electrical characteristics (Tj = 25 C, unless otherwise specified) Snubberless and logic level (3 quadrants) T8 BTA08/BTB08 Symbol Parameter Quadrant Unit 10 35 50 TW SW CW BW (1) I I - II - III Max. 10 35 50 5 10 35 50 mA GT VD = 12 V, RL = 30 VGT I - II - III Max. 1.2 V V = V , D DRM V R = 3.3 k, I - II - III Min. 0.2 V GD L T = 125 C j (2) IH IT = 100 mA Max. 15 35 50 10 15 35 50 mA I - III Max. 25 50 70 10 25 50 70 I I = 1.2 x I mA L G GT II Max. 30 60 80 15 30 60 80 V = 67% V , D DRM dV/dt Max. 40 400 1000 20 40 400 1000 V/s gate open, T = 125 C j (dV/dt)c = 0.1 V/s, Min. 5.4 3.5 5.4 Tj = 125 C (dV/dt)c = 10 V/s, (dl/dt)c Min. 2.8 1.5 2.98 A/ms T = 125 C j Without snubber, Min. 4.5 7 4.5 7 Tj = 125 C Notes: (1) Minimum I is guaranteed at 5 % of I max. GT GT (2) For both polarities of A2 referenced to A1 2/18 DocID7472 Rev 12