LOT No. LOT No. Ordering number : ENA1564B MCH3376 Power MOSFET MCH3376 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =--10V, I =--1mA --0.4 --1.4 V GS DS D g Forward Transconductance V =--10V, I =--750mA 1.14 1.9 S FS DS D R (on)1 I =--750mA, V =--4.5V 185 241 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--300mA, V =--2.5V 275 385 m DS D GS R (on)3 I =--100mA, V =--1.8V 410 615 m DS D GS Input Capacitance Ciss 120 pF Output Capacitance Coss V =--10V, f=1MHz 26 pF DS Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time t (on) 5.3 ns d Rise Time t 9.7 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 16 ns d Fall Time t 14 ns f Total Gate Charge Qg 1.7 nC Gate-to-Source Charge Qgs V =--10V, V =--4.5V, I =--1.5A 0.28 nC DS GS D Gate-to-Drain Miller Charge Qgd 0.47 nC Forward Diode Voltage V I =--1.5A, V =0V --0.89 --1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --10V DD V IN --4.5V I = --750mA D 0V R =13.3 L V V IN D OUT PW=10s D.C.1% G P.G 50 MCH3376 S Ordering Information Device Package Shipping memo MCH3376-TL-E Pb-Free MCPH3 3,000pcs./reel MCH3376-TL-W Pb-Free and Halogen Free No. A1564-2/5