MCH3377-TL-W ON Semiconductor

LOT No. LOT No. Ordering number : ENA0957B MCH3377 P-Channel Power MOSFET MCH3377 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--1.5A 2.2 3.8 S DS D R (on)1 I =--1.5A, V =--4.5V 63 83 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1A, V =--2.5V 88 125 m DS D GS R (on)3 I =--0.2A, V =--1.8V 130 200 m DS D GS Input Capacitance Ciss 375 pF Output Capacitance Coss V =--10V, f=1MHz 77 pF DS Reverse Transfer Capacitance Crss 58 pF Turn-ON Delay Time t (on) 8.1 ns d Rise Time t 26 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 42 ns d Fall Time t 37 ns f Total Gate Charge Qg 4.6 nC Gate-to-Source Charge Qgs V =--10V, V =--4.5V, I =--3A 0.8 nC DS GS D Gate-to-Drain Miller Charge Qgd 1.3 nC Diode Forward Voltage V I =--3A, V =0V --0.83 --1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V = --10V V IN DD 0V --4V I = --1.5A D V IN R =6.67 L D V OUT PW=10s D.C.1% G MCH3377 P.G 50 S Ordering Information Device Package Shipping memo MCH3377-TL-E Pb-Free MCH3377-TL-H MCPH3 3,000pcs./reel Pb-Free and Halogen Free MCH3377-TL-W Pb-Free and Halogen Free No. A0957-2/5