X-On Electronics has gained recognition as a prominent supplier of MCH3412-TL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCH3412-TL-E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCH3412-TL-E ON Semiconductor

MCH3412-TL-E electronic component of ON Semiconductor
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Part No.MCH3412-TL-E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ULTRAHIGH-SPEED SWITCHING APPLICATIONS
Datasheet: MCH3412-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.27 ea
Line Total: USD 810 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.27
3001 : USD 0.1685
6001 : USD 0.162

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.27
3001 : USD 0.1685
6001 : USD 0.162

   
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Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCH3412-TL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH3412-TL-E and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENN6901 MCH3412 N-Channel Silicon MOSFET MCH3412 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resinstance. unit : mm Ultrahigh-speed switching. 2167 4V drive. [MCH3412] 0.3 0.15 3 12 0.65 2.0 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 30 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I 3A D Drain Current (Pulse) I PW 10s, duty cycle 1% 12 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (900mm 0.8mm) 1 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +125 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =1.5A 2.1 3 S DS D Marking : KM Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 MCH3412/D 0.15 1.6 0.25 0.25 0.85 2.1V =2.5V GS MCH3412 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max R (on)1 I =1.5A, V =10V 64 84 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1A, V =-4V 105 150 m DS D GS Input Capacitance Ciss V =10V, f=1MHz 180 pF DS Output Capacitance Coss V =10V, f=1MHz 42 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 25 pF DS Turn-ON Delay Time t (on) See specified Test Circuit 7 ns d Rise Time t See specified Test Circuit 2.8 ns r Turn-OFF Delay Time t (off) See specified Test Circuit 18.5 ns d Fall Time t See specified Test Circuit 4.4 ns f Total Gate Charge Qg V =10V, V =10V, I =3A 4.9 nC DS GS D Gate-to-Source Charge Qgs V =10V, V =10V, I =3A 0.93 nC DS GS D Gate-to-Drain Miller Charge Qgd V =10V, V =10V, I =3A 0.63 nC DS GS D Diode Forward Voltage V I =3A, V =0 0.85 1.2 V SD S GS Switching Time Test Circuit V =15V DD V IN 10V I =1.5A D 0V R =10 L V IN D V OUT PW=10s D.C. 1% G MCH3412 P.G 50 S I -- V I -- V D DS D GS 4.0 4.0 V =10V DS 3.6 3.5 3.2 3.0 2.8 2.5 2.4 2.0 2.0 1.6 1.5 1.2 1.0 0.8 0.5 0.4 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Drain-to-Source Voltage, V -- V IT02942 Gate-to-Source Voltage, V -- V IT02943 DS GS R (on) -- V R (on) -- Ta DS GS DS 250 250 Ta=25C 200 200 1.0A 150 150 I =1.5A D 100 100 50 50 0 0 02468 10 12 14 16 18 20 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, V -- V IT02944 Ambient Temperature, Ta -- C IT02945 GS Rev.0 I Page 2 of 4 I www.onsemi.com I =1.5A, V =10V D GS I =1.0A, V =4V D GS 3.0V 25C 4.0V 5.0V 6.0V 8.0V 10.0V Ta=75C --25C Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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