Ordering number : ENN6901
MCH3412
N-Channel Silicon MOSFET
MCH3412
Ultrahigh-Speed Switching Applications
Features Package Dimensions
Low ON-resinstance. unit : mm
Ultrahigh-speed switching. 2167
4V drive.
[MCH3412]
0.3 0.15
3
12
0.65
2.0
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V 30 V
DSS
Gate-to-Source Voltage V 20 V
GSS
Drain Current (DC) I 3A
D
Drain Current (Pulse) I PW 10s, duty cycle 1% 12 A
DP
2
Allowable Power Dissipation P Mounted on a ceramic board (900mm 0.8mm) 1 W
D
Channel Temperature Tch 150 C
Storage Temperature Tstg --55 to +125 C
Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V I =1mA, V =0 30 V
(BR)DSS D GS
Zero-Gate Voltage Drain Current I V =30V, V =0 1 A
DSS DS GS
Gate-to-Source Leakage Current I V =16V, V =0 10 A
GSS GS DS
Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V
GS DS D
Forward Transfer Admittance yfs V =10V, I =1.5A 2.1 3 S
DS D
Marking : KM Continued on next page.
2011, SCILLC. All rights reserved. Publication Order Number:
www.onsemi.com
Rev.0 I Page 1 of 4 I www.onsemi.com
Jan-2011, Rev. 0 MCH3412/D
0.15
1.6
0.25 0.25
0.85 2.1V =2.5V
GS
MCH3412
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
R (on)1 I =1.5A, V =10V 64 84 m
DS D GS
Static Drain-to-Source On-State Resistance
R (on)2 I =1A, V =-4V 105 150 m
DS D GS
Input Capacitance Ciss V =10V, f=1MHz 180 pF
DS
Output Capacitance Coss V =10V, f=1MHz 42 pF
DS
Reverse Transfer Capacitance Crss V =10V, f=1MHz 25 pF
DS
Turn-ON Delay Time t (on) See specified Test Circuit 7 ns
d
Rise Time t See specified Test Circuit 2.8 ns
r
Turn-OFF Delay Time t (off) See specified Test Circuit 18.5 ns
d
Fall Time t See specified Test Circuit 4.4 ns
f
Total Gate Charge Qg V =10V, V =10V, I =3A 4.9 nC
DS GS D
Gate-to-Source Charge Qgs V =10V, V =10V, I =3A 0.93 nC
DS GS D
Gate-to-Drain Miller Charge Qgd V =10V, V =10V, I =3A 0.63 nC
DS GS D
Diode Forward Voltage V I =3A, V =0 0.85 1.2 V
SD S GS
Switching Time Test Circuit
V =15V
DD
V
IN
10V
I =1.5A
D
0V
R =10
L
V
IN D V
OUT
PW=10s
D.C. 1%
G
MCH3412
P.G
50
S
I -- V I -- V
D DS D GS
4.0 4.0
V =10V
DS
3.6
3.5
3.2
3.0
2.8
2.5
2.4
2.0 2.0
1.6
1.5
1.2
1.0
0.8
0.5
0.4
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Drain-to-Source Voltage, V -- V IT02942 Gate-to-Source Voltage, V -- V IT02943
DS GS
R (on) -- V R (on) -- Ta
DS GS DS
250 250
Ta=25C
200 200
1.0A
150 150
I =1.5A
D
100 100
50 50
0 0
02468 10 12 14 16 18 20 --60 --40 --20 0 20 40 60 80 100 120 140 160
Gate-to-Source Voltage, V -- V IT02944 Ambient Temperature, Ta -- C IT02945
GS
Rev.0 I Page 2 of 4 I www.onsemi.com
I =1.5A, V =10V
D GS
I =1.0A, V =4V
D GS
3.0V
25C
4.0V
5.0V
6.0V
8.0V
10.0V
Ta=75C
--25C
Static Drain-to-Source
On-State Resistance, R (on) -- m Drain Current, I -- A
DS D
Static Drain-to-Source
On-State Resistance, R (on) -- m Drain Current, I -- A
DS D