LOTNo. LOTNo. MCH6331 Power MOSFET 30V, 98m , 3.5A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 4V drive 98m 10V Pb-Free, Halogen Free and RoHS compliance 30V 171m 4.5V 3.5A Ultra small package MCPH6 (2.0mm2.1mm0.85mmt) 199m 4V Typical Applications Load Switch ELECTRICAL CONNECTION P-Channel SPECIFICATIONS 1,2,5,6 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) Parameter SymbolValue Unit Drain to Source Voltage V 30 V DSS 1:Drain Gate to Source Voltage V 20 V GSS 2:Drain 3 Drain Current (DC) I 3.5 A D 3:Gate 4:Source Drain Current (Pulse) I 14 5:Drain A DP PW 10s, duty cycle 1% 6:Drain 4 Power Dissipation When mounted on ceramic substrate P 1.5 W D 2 (1200mm 0.8mm) PACKING TYPE : TL MARKING Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage YF the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TL 2 : This product is designed to ESD immunity<200V*, so please take care when handling. *Machine Model ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 83.3 C/W JA 2 (1200mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : July 2015 - Rev. 2 MCH6331/D MCH6331 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I =1.5A 1.68 2.8 S FS DS D R (on)1 I =1.5A, V =10V 75 98m DS D GS Static Drain to Source On-State 122 171 R (on)2 I =0.75A, V =4.5V m DS D GS Resistance R (on)3 I =0.75A, V =4V 142 199 m DS D GS Input Capacitance Ciss 250 pF Output Capacitance Coss 65 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 46 pF Turn-ON Delay Time t (on) 5.4 ns d Rise Time t 12 ns r See specified Test Circuit Turn-OFF Delay Time 26 ns t (off) d Fall Time 19 ns t f Total Gate Charge Qg 5.0 nC Gate to Source Charge Qgs 1.0 nC V =10V, V =10V, I =3.5A DS GS D Gate to Drain Miller Charge Qgd 1.2 nC Forward Diode Voltage V SD I =3.5A, V=0V 0.86 1.5 V S GS Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =--15V DD IN 0V --10V I =--1.5A D V IN R =10 L D V OUT PW=10s D.C.1% G MCH6331 P.G 50 S www.onsemi.com 2