LOTNo. LOTNo. MCH6421 Power MOSFET 20V, 38m , 5.5A, Single N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 1.8V drive 38m 4.5V High Speed Switching 20V 61m 2.5V 5.5A ESD Diode-Protected Gate 99m 1.8V Pb-Free and RoHS compliance Halogen Free compliance : MCH6421-TL-W ELECTRICAL CONNECTION N-Channel Typical Applications 1,2,5,6 Load Switch Synchronous Boost Converter SPECIFICATIONS 1:Drain ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 3 2:Drain Parameter SymbolValue Unit 3:Gate 4:Source Drain to Source Voltage V 20V DSS 5:Drain Gate to Source Voltage V 12 V GSS 6:Drain 4 Drain Current (DC) I 5.5A D Drain Current (Pulse) PACKING TYPE : TL MARKING I 22 A DP PW 10s, duty cycle 1% Power Dissipation KV When mounted on ceramic substrate P 1.5 W D 2 (1200mm 0.8mm) TL Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C ORDERING INFORMATION Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage See detailed ordering and shipping the device. If any of these limits are exceeded, device functionality should not information on page 5 of this data sheet. be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 83.3 C/W JA 2 (1200mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : July 2015 - Rev. 2 MCH6421/D MCH6421 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=2A 2.0 3.8 S FS DS D R (on)1 I =2A, V=4.5V 29 38m DS D GS Static Drain to Source On-State 43 61 R (on)2 I =1A, V =2.5V m DS D GS Resistance R (on)3 I =0.5A, V =1.8V 69 99 m DS D GS Input Capacitance Ciss 410 pF Output Capacitance Coss 84 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 59 pF Turn-ON Delay Time t (on) 7.5 ns d Rise Time t 26 ns r See specified Test Circuit Turn-OFF Delay Time 38 ns t (off) d Fall Time 32 ns t f Total Gate Charge Qg 5.1 nC Gate to Source Charge Qgs 0.7 nC V =10V, V =4.5V, I =5.5A DS GS D Gate to Drain Miller Charge Qgd 1.7 nC Forward Diode Voltage V SD I =5.5A, V=0V 0.8 1.2V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =10V DD IN 4.5V 0V I =2A D V IN R =5 L D V OUT PW=10s D.C.1% G MCH6421 P.G 50 S www.onsemi.com 2