MCM1206 Features Advanced Trench MOSFET Process Technology Ultra Low On-Resistance with Low Gate Charge Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C DFN2020-6J Thermal Resistance: 556C/W Junction to Ambient Parameter Rating Symbol Unit * ) Drain-Source Voltage V -12 V DS Gate-Source Volltage V 8 ( V GS + Continuous Drain Current I -6 A D (Note 2) I -20 A Pulsed Drain Current DM 2 4 44 P Total Power Dissipation 350 mW D 4 0 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 1 - 2. Repetitive Rating: Pluse Width Limited by Junction Temperature , 4 3 4 Internal Structure D D S 6 5 4 DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.028 0.032 0.700 0.800 B 0.008 0.203 TYP. Marking: 1206 C 0.000 0.002 0.000 0.050 1 2 3 D D G D 0.076 0.082 1.924 2.076 E 0.076 0.082 1.924 2.076 F 0.031 0.039 0.800 1.000 G 0.033 0.041 0.850 1.050 H 0.008 0.016 0.200 0.400 J 0.008 ----- 0.200 ----- K 0.018 0.026 0.460 0.660 L 0.026 0.650 TYP. M 0.010 0.014 0.250 0.350 N 0.007 0.013 0.174 0.326 Rev.3-3-12012020 1/4 MCCSEMI.COMMCM1206 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -12 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =8V 100 nA GSS DS GS I V =-50V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS (Note 2) V V =V , I =-250A -0.5 -0.9 V Gate-Threshold Voltage GS(th) DS GS D V =-4.5V, I =-3.5A 30 45 GS D (Note 2) R V =-2.5V, I =-3A 40 60 m Drain-Source On-Resistance DS(on) GS D V =-1.8V, I =-2A 60 90 GS D Diode Forward Voltage V V =0V, I =-3.3A -1.2 V SD GS S (Note 2) g V =-5V, I =-4.1A 6 S Forward Transconductance FS DS D (Note 3) Dynamic Characteristics Input Capacitance C 740 iss C V =-4V,V =0V,f=1MHz pF Output Capacitance DS GS 290 oss Reverse Transfer Capacitance C 190 rss (Note 3) Switching Characteristics V =-4V,V =-4.5V,I =-4.1A 7.8 15 DS GS D Total Gate Charge Q g 4.5 9 nC Q V =-4V,V =-2.5V,I =-4.1A Gate-Source Charge DS GS D 1.2 gs Gate-Drain Charge Q 1.6 gd Gate Resistance R f=1MHz 1.4 7 14 g t Turn-On Delay Time 13 20 d(on) V =-4V, DD Turn-On Rise Time t 35 53 r R =1.2, I -3.3A, L D t Turn-Off Delay Time 32 48 d(off) V =-4.5V,R =1 GEN g Turn-Off Fall Time t 10 20 f ns t Turn-On Delay Time 5 10 d(on) V =-4V, DD Turn-On Rise Time t 11 17 r R =1.2, I -3.3A, L D t Turn-Off Delay Time 22 33 d(off) V =-8V,R =1 GEN g Turn-Off Fall Time t 16 24 f Note: 2. Pulse Test : Pulse Width300s, Duty Cycle 2%. 3. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM