M C C R Micro Commercial Components omponents 20736 Marilla Street Chatsworth MCMNP517 Features Halogen free available upon request by adding suffix-H N and P-Channel Super High Density Cell Design for Extremely Low R DS(ON) Lead Free Finish/Rohs Compliant Suffix designates Enhancement Mode RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Field Effect Transistor Moisture Sensitivity Level 1 Marking:517 DFN2020-6U Maximum ratings ( T =25 unless otherwise noted) a D Parameter Symbol C N-ChannelP-ChannelUnit Drain-Source Voltage V 12 -12 DS V A B V Gate-Source Voltage V 12 12 GS E 6.0 -4.1 A Continuous Drain Current (NOTE1) I D I DM24 -16.4 A Pulsed Drain Current L -4.1 6 A Continous Source-Drain Diode Current I S K Thermal Resistance from R JA 167 /W J Junction to Ambient (NOTE1) G 150 Operating Junction Temperature T J -55~+150 Storage Temperature T STG F F Notes : H 1.Surface mounted on FR4 board using the minimum recommended pad size. Dimensions Equivalent Circuit INCHES MM DIM NOTE MIN MAX MIN MAX A 0.028 .035 0.700 0.900 4 5 6 B 0.008REF. 0.203REF. 0.000 0.050 C 0000 0.002 D 0.076 0.082 1.924 2.076 1.924 2.076 E 0.076 0.082 F 0.020 0.028 0.520 0.720 D2 D1 G 0.035 0.043 0.900 1.100 0.350 H 0.010 0.014 0.250 J 0.008 --- 0.200 --- 0.174 0.326 K 0.007 0.013 2 3 1 0.650TYP. L 0.026TYP. www.mccsemi .com Revision: B 2017/11/30 1 of 6M C C R Micro Commercial Components N-ch MOSFET ELECTRICAL CHARACTERISTICS(T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 12 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =12V, VDS = 0V 100 nA Gate threshold voltage (note 2) VGS(th) VDS =V , ID =250A 0.5 1 V GS VGS =10V, ID =6A 24 m VGS =4.5V, ID =5A 27 m Drain-source on-resistance(note 2) RDS(on) VGS =2.5V, ID =4A 42 m VGS =1.8V, ID =2A 74 m Forward tranconductance(note 2) gFS VDS =5V, ID =3.8A 4 S Diode forward voltage V I =1A, VGS = 0V 1 V SD S DYNAMIC CHARACTERISTICS (note 4) Input Capacitance C 630 pF iss Output Capacitance C VDS =10V,VGS =0V,f =1MHz 164 pF oss pF Reverse Transfer Capacitance C 137 rss SWITCHING CHARACTERISTICS (note 3,4) Turn-on delay time td(on) 5.5 ns Turn-on rise time tr 14 ns V =5V,V =10V, GS DS R =6R =1.7 Turn-off delay time td(off) GEN L 29 ns Turn-off fall time tf 10.2 ns Total Gate Charge Q 12 nC g V =10V,I =6A, DS D Gate-Source Charge Q 1 nC gs V =10V GS Gate-Drain Charge Q 2 nC gd www.mccsemi .com 2 of 6 Revision: B 2017/11/30 026)(7 (/(&75,& / &+ 5 &7(5,67,&6