X-On Electronics has gained recognition as a prominent supplier of MCQ4438-TP MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCQ4438-TP MOSFETs are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCQ4438-TP Micro Commercial Components (MCC)

MCQ4438-TP electronic component of Micro Commercial Components (MCC)
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Part No.MCQ4438-TP
Manufacturer: Micro Commercial Components (MCC)
Category: MOSFETs
Description: MOSFET N-Channel MOSFET, SOP-8 package
Datasheet: MCQ4438-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.5535 ea
Line Total: USD 1.55 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5535
10 : USD 0.7391
100 : USD 0.4018
500 : USD 0.3159
1000 : USD 0.2444
2000 : USD 0.2226
4000 : USD 0.2071
8000 : USD 0.1885
24000 : USD 0.1813

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCQ4438-TP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCQ4438-TP and other electronic components in the MOSFETs category and beyond.

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MCQ4438 Features Trench Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS N-CHANNEL Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 100C/W Junction to Ambient SOP-8 Parameter Symbol Rating Unit B Drain-Source Voltage V 60 V D DS Gate-Source Volltage V 20 V GS A C Continuous Drain Current I 8.2 A D Pulsed Drain Current I 40 A DM F E Total Power Dissipation P 1.25 W D K H J Internal Structure D D D D G 8 7 6 5 DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 B 0.004 0.010 0.10 0.25 C 0.053 0.061 1.35 1.55 4 1 2 3 D 0.013 0.020 0.33 0.51 S S S G E 0.007 0.010 0.17 0.25 F 0.185 0.200 4.70 5.10 G 0.050 1.270 TYP. H 0.228 0.244 5.80 6.20 J 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 K 0 8 0 8 Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-2-12122020 1/4 MCCSEMI.COMMCQ4438 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 60 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =20V 100 nA GSS DS GS I V =60V, V =0V Zero Gate Voltage Drain Current 1 A DSS DS GS Gate-Threshold Voltage V V =V , I =250A 1 3 V GS(th) DS GS D V =10V, I =8.2A 22 m GS D Drain-Source On-Resistance R DS(on) V =4.5V, I =7.6A 36 m GS D g V =5V, I =8.2A Forward Tranconductance 10 S fs DS D Diode Forward Voltage V V =0V, I =1A 1 V SD GS S Dynamic Characteristics Input Capacitance C 2300 iss C V =30V,V =0V,f=1MHz pF Output Capacitance 155 oss DS GS Reverse Transfer Capacitance C 116 rss Q Total Gate Charge(10V) 58 g Q Total Gate Charge(4.5) 30 g V =30V,V =10V,I =8.2A nC DS GS D Q Gate-Source Charge 6 gs Q Gate-Drain Charge 14.4 gd t Turn-On Delay Time 8.2 d(on) t Turn-On Rise Time 5.5 r V =10V,V =30V, GS DS ns R =3.6, R =3 L GEN Turn-Off Delay Time t 29.7 d(off) t Turn-Off Fall Time 5.2 f Rev.3-2-12122020 2/4 MCCSEMI.COM

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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