MCQ4459 Features Advanced Trench MOSFET Process Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-Channel Power Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS MOSFET Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 89C/W Junction to Ambient SOP-8 B D Parameter Symbol Rating Unit V Drain -Source Voltage -30 V DS A C Gate -Source Voltage V 20 V GS F I -6.5 A Drain Current-Continuous D E I -26 A Drain Current-Pulsed DM K Power Dissipation P 1.4 D W (Note1) Single Pulsed Avalanche Energy E 14 mJ AS H J Note: 1.EAS condition: V =-50V,L=0.5mH, R =25, Starting T = 25C DD G J G DIMENSIONS Internal Structure INCHES MM DIM NOTE MIN MAX MIN MAX D D D D A 0.053 0.069 1.35 1.75 8 7 6 5 B 0.004 0.010 0.10 0.25 C 0.053 0.061 1.35 1.55 D 0.013 0.020 0.33 0.51 E 0.007 0.010 0.17 0.25 F 0.185 0.200 4.70 5.10 G 0.050 1.270 TYP. H 0.228 0.244 5.80 6.20 J 0.150 0.157 3.80 4.00 1 2 3 4 0.016 0.050 0.40 1.27 K Marking:Q4459 S S S G 0 8 0 8 Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-2-12012020 1/4 MCCSEMI.COMMCQ4459 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -30 V (BR)DSS GS D (Note1) Gate-Threshold Voltage V V =V , I =-250A V -1.4 -2.0 -2.4 GS(th) DS GS D I V = 20V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS Zero Gate Voltage Drain Current I V =-30V, V =0V -1 .0 A DSS DS GS V =-10V, I =-6.5A 26 46 GS D (Note1) m Drain-Source On-Resistance R DS(on) V =-4.5V, I =-5.0A 46 72 GS D (Note1) g V =-5.0V, I =-6.5A 6.0 Forward Transconductance S FS DS D (Note2) Dynamic Characteristics C 415 625 Input Capacitance iss C V =-15V,V =0V, f=1MHz pF 70 130 Output Capacitance oss DS GS Reverse Transfer Capacitance C 40 90 rss (Note2) Switching Characteristics t 7.5 d(on) Turn-On Delay Time t 5.5 r Turn-On Rise Time V =-15V,I =-1.0A,V =-10V , DD D GS nS R =3.0, R =2.5 GEN L t 19 d(off) Turn-Off Delay Time Turn-Off Fall Time t 7.0 f Gate Resistance R V =0V,V =0V, f=1MHz 3.5 7.5 11.5 DS GS g Q Total Gate Charge g 7.4 11 Q V =-15V, I =-6.5A,V =-10V D GS 1.3 1.9 Gate-Source Charge gs DS nC Gate-Drain Charge Q 1.3 3.1 gd Drain-Source Diode Characteristics (Note1) Diode Forward Voltage V V =0V,I =-1A -1. 0 V SD GS S Continuous Drain-Source Diode I -6.5 A S Forward Current Pulsed Drain-Source Diode I -26 A SM Forward Current Note: 1.Pulse Test : Pulse Width300s, duty cycle 2%. 2.Guaranteed by design, not subject to production testing. Rev.3-2-12012020 2/4 MCCSEMI.COM