MCQ4406-TP Micro Commercial Components (MCC)

MCQ4406 Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Enhancement Mode Compliant. See Ordering Information) Field Effect Transistor Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 89C/W Junction to Ambient SOP-8 Parameter Symbol Rating Unit B V D Drain -Source Voltage 30 V DS Gate -Source Voltage V 20 V GS A C I 10 A Drain Current-Continuous D (Note1) E AS 105 mJ Single Pulsed Avalanche Energy F E Pulsed Drain Current I 40 A DM K Power Dissipation P 1.4 D W Notes : H J 1.E condition: V =50V,L=0.5mH, R =25 , Starting T = 25C AS DD G J G Internal Structure DIMENSIONS INCHES MM DIM NOTE D D D D MIN MAX MIN MAX 8 7 6 5 A 0.053 0.069 1.35 1.75 B 0.004 0.010 0.10 0.25 C 0.053 0.061 1.35 1.55 D 0.013 0.020 0.33 0.51 E 0.007 0.010 0.17 0.25 F 0.185 0.200 4.70 5.10 G 0.050 1.270 TYP. 4 1 2 3 H 0.228 0.244 5.80 6.20 Marking: Q4406 S S S G J 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 K 0 8 0 8 Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-2-12012020 1/4 MCCSEMI.COMMCQ4406 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 30 V (BR)DSS GS D (Note1) Gate-Threshold Voltage V V =V , I =250A V 1.0 1.5 3.0 GS(th) DS GS D I V = 20V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS Zero Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS 7.6 12 V =10V, I =12A GS D (Note1) Drain-Source On-Resistance R DS(on) m V =4.5V, I =10A 11 16 GS D g V =5V, I =10A 15 Forward Transconductance S FS DS D (Note2) Dynamic Characteristics C Input Capacitance iss 1550 C V =15V,V =0V, f=1MHz pF 300 Output Capacitance oss DS GS Reverse Transfer Capacitance C 180 rss (Note2) Switching Characteristics t 30 d(on) Turn-On Delay Time V =25V,V =10V, I =1A , DD GS D t 20 ns r Turn-On Rise Time R =6,R =6.7 GEN L t 100 d(off) Turn-Off Delay Time Turn-Off Fall Time t 80 f 13 Total Gate Charge Q g V =15V,I =10A,V =5.0V DS D GS 5.5 nC Gate-Source Charge Q gs Gate-Drain Charge Q 3.5 gd Source-Drain Diode characteristics Drain-Source Diode 10 A I S Forward Current (Note1) 1.2 V Diode Forward voltage V =0V,I =10A V SD GS S 40 A Pulsed drain-source diode forward current I SM Notes: 1.Pulse Test: Pulse Width 300s, Duty Cycle 2%. 2.Guaranteed by design, not subject to production testing. Rev.3-2-12012020 2/4 MCCSEMI.COM