TSM950N10CW Taiwan Semiconductor N-Channel Power MOSFET 100V, 6.5A, 95m FEATURES KEY PERFORMANCE PARAMETERS Fast switching PARAMETER VALUE UNIT Pb-free plating V 100 V DS RoHS compliant Halogen-free mold compound V = 10V GS 95 R (max) m DS(on) V = 4.5V 110 GS APPLICATION Q 9.3 nC g Networking Load Switch Lighting SOT-223 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS T = 25C 6.5 C (Note 1) Continuous Drain Current I A D T = 100C 4.1 C (Note 2) Pulsed Drain Current I 26 A DM Total Power Dissipation T = 25C P 9 W C DTOT Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 14 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JC CA design. R shown below for single device operation on FR-4 PCB in still air JA 1 Version: D1807 TSM950N10CW Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 100 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1.2 1.6 2.5 DS GS D GS(TH) V Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 100V, V = 0V I -- -- 1 DS GS DSS A V = 10V, I = 5A -- 80 95 GS D Drain-Source On-State Resistance R m DS(on) V = 4.5V, I = 3A -- 85 110 GS D (Note 4) Dynamic Total Gate Charge Q -- 9.3 -- g V = 48V, I = 5A, DS D Gate-Source Charge Q -- 2.1 -- gs nC V = 10V GS Gate-Drain Charge Q -- 1.8 -- gd Input Capacitance C -- 1480 -- iss V = 50V, V = 0V, DS GS Output Capacitance C -- 480 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 35 -- rss Gate Resistance f = 1MHz, open drain R -- 1.3 -- g (Note 5) Switching Turn-On Delay Time t -- 2.9 -- d(on) V = 30V, DD Turn-On Rise Time t -- 9.5 -- r R = 3.3, ns GEN Turn-Off Delay Time t -- 18.4 -- d(off) I = 1A, V = 10V, D GS Turn-Off Fall Time t -- 5.3 -- f (Note 3) Source-Drain Diode Forward On Voltage I = 3.3A, V = 0V V -- -- 1 V S GS SD Continuous Drain-Source Diode 6.5 I -- -- A S Pulse Drain-Source Diode I -- -- 26 A SM Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. Pulse test: PW 300s, duty cycle 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. 2 Version: D1807