X-On Electronics has gained recognition as a prominent supplier of TSM80N950CP ROG MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSM80N950CP ROG MOSFETs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSM80N950CP ROG Taiwan Semiconductor

TSM80N950CP ROG electronic component of Taiwan Semiconductor
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Part No.TSM80N950CP ROG
Manufacturer: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFET 800V Power MOSFET Superjunction N-chan
Datasheet: TSM80N950CP ROG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.629 ea
Line Total: USD 2.63 
Availability - 4
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.629
10 : USD 2.189
25 : USD 2.156
100 : USD 1.826
250 : USD 1.793
500 : USD 1.661
1000 : USD 1.463
2500 : USD 1.463
5000 : USD 1.397

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Product
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TSM80N950CP ROG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSM80N950CP ROG and other electronic components in the MOSFETs category and beyond.

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TSM80N950 Taiwan Semiconductor N-Channel Power MOSFET 800V, 6A, 0.95 FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance due to small figure-of-merit V 800 V DS High ruggedness performance R (max) 0.95 DS(on) High commutation performance Q 19.6 nC g Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition APPLICATION Power Supply Lighting TO-251 (IPAK) TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 800 V DS Gate-Source Voltage V 30 V GS T = 25C 6 A C (Note 1) Continuous Drain Current I D T = 100C 3.8 A C (Note 2) Pulsed Drain Current I 18 A DM Total Power Dissipation T = 25C P 110 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 121 mJ AS (Note 3) Single Pulsed Avalanche Current I 2.2 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Document Number:DS P0000217 1 Version: B1706 TSM80N950 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 1.14 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 800 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 -- 4 DS GS D GS(TH) V Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 800V, V = 0V I -- -- 1 DS GS DSS A V = 10V, I = 3A -- 0.8 0.95 Drain-Source On-State Resistance R GS D DS(on) (Note 5) Dynamic Total Gate Charge Q -- 19.6 -- g V = 380V, I = 6A, DS D Gate-Source Charge Q -- 3.5 -- gs nC V = 10V GS Gate-Drain Charge Q -- 9.7 -- gd Input Capacitance C -- 691 -- iss V = 100V, V = 0V, DS GS pF Output Capacitance f = 1.0MHz C -- 63 -- oss Gate Resistance F = 1MHz, open drain R -- 3.4 -- g (Note 6) Switching Turn-On Delay Time t -- 23 -- d(on) V = 380V, DD Turn-On Rise Time t -- 12 -- r R = 25, ns GEN Turn-Off Delay Time t -- 57 -- d(off) I = 6A, V = 10V, D GS Turn-Off Fall Time t -- 11 -- f (Note 4) Source-Drain Diode Forward On Voltage -- -- 1.4 V I = 6A, V = 0V V S GS SD Reverse Recovery Time -- 249 -- ns t rr V = 100V, I = 6A R S Reverse Recovery Charge -- 2.6 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. o 3. L = 50mH, I = 2.2A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number:DS P0000217 2 Version: B1706

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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