TSM60NB041PW Taiwan Semiconductor N-Channel Power MOSFET 600V, 78A, 41m FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance, small R *Q figure of merit (FOM) DS(ON) g V 600 V DS High ruggedness performance R (max) 41 m DS(on) 100% UIS and R tested g Q 139 nC g Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS PFC Stage Server/Telecom Power Charging Station Inverter Power Supply TO-247 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T = 25C 78 A C (Note 1) Continuous Drain Current I D T = 100C 49 A C (Note 2) Pulsed Drain Current I 234 A DM Total Power Dissipation T = 25C P 446 W C D (Note 3) Single Pulse Avalanche Energy E 1122 mJ AS (Note 3) Single Pulse Avalanche Current I 6.7 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 0.28 C/W JC Junction to Ambient Thermal Resistance R 42 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: A1706 TSM60NB041PW Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 600 -- -- GS D DSS V Gate Threshold Voltage V = V , I = 250A V 2 3 4 V DS GS D GS(TH) Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 1 A DS GS DSS Drain-Source On-State Resistance V = 10V, I = 21.7A R -- 38 41 m GS D DS(on) (Note 4) (Note 5) Dynamic Total Gate Charge Q -- 139 -- g V = 480V, I = 65A, DS D Gate-Source Charge Q -- 41 -- nC gs V = 10V GS Gate-Drain Charge Q -- 52 -- gd Input Capacitance C -- 6120 -- iss V = 100V,V = 0V, DS GS Output Capacitance C -- 276 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 43 -- rss Gate Resistance f = 1.0MHz R -- 4.6 9.2 g (Note 6) Switching Turn-On Delay Time t -- 107 -- d(on) Turn-On Rise Time t -- 152 -- V = 300V, R = 5, r DD GEN ns I = 32.5A, V = 10V Turn-Off Delay Time t -- 445 -- D GS d(off) Turn-Off Fall Time t -- 148 -- f Source-Drain Diode Body-Diode Continuous Forward Current -- -- 78 A I S Body-Diode Pulsed Current -- -- 234 A I SM (Note 4) Forward Voltage -- -- 1.4 V I = 65A, V = 0V V S GS SD Reverse Recovery Time -- 478 -- ns t rr I = 32.5A S Reverse Recovery Charge -- 10 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. o 3. L = 50mH, I = 6.7A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM60NB041PW C1G TO-247 25pcs / Tube 2 Version: A1706