TSM60NB099PW Taiwan Semiconductor N-Channel Power MOSFET 600V, 38A, 99m FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance, small R *Q figure of merit (FOM) DS(ON) g V 600 V DS High ruggedness performance R (max) 99 m DS(on) 100% UIS and R tested g Q 62 nC g Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS PFC stage Server/Telecom Power Charging Station Inverter Power Supply TO-247 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T = 25C 38 A C (Note 1) Continuous Drain Current I D T = 100C 24 A C (Note 2) Pulsed Drain Current I 114 A DM Total Power Dissipation T = 25C P 329 W C D (Note 3) Single Pulse Avalanche Energy E 784 mJ AS (Note 3) Single Pulse Avalanche Current I 5.6 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 0.38 C/W JC Junction to Ambient Thermal Resistance R 42 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: A1705 TSM60NB099PW Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 600 -- -- GS D DSS V Gate Threshold Voltage V = V , I = 250A V 2 3 4 V DS GS D GS(TH) Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 1 A DS GS DSS Drain-Source On-State Resistance V = 10V, I = 11.7A R -- 86 99 m GS D DS(on) (Note 4) (Note 5) Dynamic Total Gate Charge Q -- 62 -- g V = 480V, I = 35A, DS D Gate-Source Charge Q -- 17 -- nC gs V = 10V GS Gate-Drain Charge Q -- 25 -- gd Input Capacitance C -- 2587 -- iss V = 100V,V = 0V, DS GS Output Capacitance C -- 123 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 20 -- rss Gate Resistance f = 1.0MHz R -- 3.3 6.6 g (Note 6) Switching Turn-On Delay Time t -- 18 -- d(on) V = 300V, DD Turn-On Rise Time t -- 24 -- r R = 5, ns GEN Turn-Off Delay Time t -- 87 -- d(off) I = 17.5A, V = 10V, D GS Turn-Off Fall Time t -- 25 -- f Source-Drain Diode Body-Diode Continuous Forward Current -- -- 38 A I S Body-Diode Pulsed Current -- -- 114 A I SM (Note 4) Forward Voltage -- -- 1.4 V I = 35A, V = 0V V S GS SD Reverse Recovery Time -- 342 -- ns t rr I = 17.5A S Reverse Recovery Charge -- 5.3 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. o 3. L = 50mH, I = 5.6A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM60NB099PW C1G TO-247 25pcs / Tube 2 Version: A1705