TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate V (V) R () I (A) DS DS(on) D 2. Drain 3. Source 900 5.1 V =10V 1.25 GS General Description The TSM3N90 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features Block Diagram Low R 4.3 (Typ.) DS(ON) Low gate charge typical 17nC (Typ.) Low Crss typical 8.7pF (Typ.) Ordering Information Part No. Package Packing TSM3N90CH C5G TO-251 75pcs / Tube TSM3N90CP ROG TO-252 2.5Kpcs / 13 Reel TSM3N90CZ C0G TO-220 50pcs / Tube N-Channel MOSFET TSM3N90CI C0G ITO-220 50pcs / Tube Note: G denotes for Halogen Free o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Limit Parameter Symbol Unit IPAK/DPAK ITO-220 TO-220 900 Drain-Source Voltage V V DS 30 Gate-Source Voltage V V GS 2.5 Tc = 25C A Continuous Drain Current I D 1.6 Tc = 100C A 10 Pulsed Drain Current * I A DM Single Pulse Avalanche Energy (Note 2) E 10 mJ AS Avalanche Current (Repetitive) (Note 1) I 2.5 A AR Repetitive Avalanche Energy (Note 1) E 9.4 mJ AR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns o Total Power Dissipation T = 25 C P 94 32 94 W C TOT Operating Junction Temperature T 150 C J o -55 to +150 Storage Temperature Range T C STG Note: Limited by maximum junction temperature Document Number: DS P0000085 1 Version: D15 Not Recommended TSM3N90 900V N-Channel Power MOSFET Thermal Performance IPAK/DPAK ITO-220 TO-220 Parameter Symbol Unit Thermal Resistance - Junction to Case R 1.33 1.33 3.9 JC o C/W Thermal Resistance - Junction to Ambient R 110 62.5 JA o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 900 -- -- V GS D DSS Drain-Source On-State Resistance V = 10V, I = 1.25A R -- 4.3 5.1 GS D DS(ON) Gate Threshold Voltage V V = V , I = 250uA V 2.0 -- 4.0 DS GS D GS(TH) Zero Gate Voltage Drain Current uA V = 900V, V = 0V I -- -- 10 DS GS DSS Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Forward Transfer Conductance S V = 30V, I = 1.25A g -- 3 -- DS D fs Dynamic Total Gate Charge -- Q -- 17 g V = 720V, I = 2.5A, DS D nC Gate-Source Charge Q -- 2.4 -- gs V = 10V GS Gate-Drain Charge Q -- 6.6 -- gd Input Capacitance -- C -- 748 iss V = 25V, V = 0V, DS GS pF Output Capacitance C -- 55 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 8.7 -- rss Switching Turn-On Delay Time -- t -- 16 d(on) V = 10V, I = 2.5A, Turn-On Rise Time t -- 25 -- GS D r nS Turn-Off Delay Time V = 450V, R = 25 t -- 63 -- DD G d(off) Turn-Off Fall Time t -- 31 -- f Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in I -- -- 2.5 A S the MOSFET Source Current (Pulse) I -- -- 10 A SM Diode Forward Voltage I = 2.5A, V = 0V V -- -- 1.5 V S GS SD Reverse Recovery Time V = 0V, I =2.5A, t -- 355 -- nS GS S fr dI /dt = 100A/us Reverse Recovery Charge Q -- 1.8 -- uC F fr Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: Max Rating E Test Condition: V = 50V, I =2A, L=5mH, R =25, Starting T =25C AS DD AS G J Guaranteed 100% E Test Condition: V = 50V, I =2A, L=1mH, R =25, Starting T =25C AS DD AS G J Note 3: I 2.5A, di/dt200A/uS, V BV , Starting T =25C SD DD DSS J Note 4: Pulse test: pulse width 300uS, duty cycle 2% Note 5: Essentially Independent of Operating Temperature Document Number: DS P0000085 2 Version: D15 Not Recommended