TSM250N02CX 20V N-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain V 20 V DS V = 4.5V 25 GS Note: V = 2.5V 35 R (max) m GS DS(on) MSL 1 (Moisture Sensitivity Level) per J-STD-020 V = 1.8V 55 GS Q 7.7 nC g Block Diagram Ordering Information Ordering code Package Packing TSM250N02CX RFG SOT-23 3kpcs / 7 Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (T = 25C unless otherwise noted) C Limit Parameter Symbol Unit 20 Drain-Source Voltage V V DS 10 Gate-Source Voltage V V GS 5.8 T = 25C A C Continuous Drain Current I D 3.7 T = 100C A C (Note 1) 23.2 Pulsed Drain Current I A DM Power Dissipation T = 25C P 1.56 W C D Operating Junction Temperature T 150 C J -55 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient R 80 C/W JA 1/5 Version: B1811 TSM250N02CX 20V N-Channel Power MOSFET Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 20 -- -- V GS D DSS V = 4.5V, I = 4A GS D -- 20 25 Drain-Source On-State Resistance V = 2.5V, I = 3A R -- 27 35 m GS D DS(on) V = 1.8V, I = 2A -- 39 55 GS D Gate Threshold Voltage V = V , I = 250A V 0.4 0.6 0.8 V DS GS D GS(TH) V = 16V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 16V, T = 85C -- -- 10 DS J Gate Body Leakage V = 10V, V = 0V I -- -- 100 nA GS DS GSS (Note 2) Forward Transconductance V = 10V, I = 3A g -- 6.5 -- S DS S fs Dynamic (Note 2,3) Total Gate Charge Q -- 7.7 -- g V = 10V, I = 4A, (Note 2,3) DS D Gate-Source Charge Q -- 0.9 -- nC gs V = 4.5V GS (Note 2,3) Gate-Drain Charge Q -- 2.4 -- gd Input Capacitance C iss -- 535 -- V = 10V, V = 0V, DS GS Output Capacitance C oss -- 60 -- pF f = 1.0MHz Reverse Transfer Capacitance C -- 34 -- rss Switching (Note 2,3) Turn-On Delay Time t d(on) -- 4.1 -- (Note 2,3) Turn-On Rise Time t r -- 11.6 -- V = 10V, I = 1A, DD D ns (Note 2,3) Turn-Off Delay Time V = 4.5V, R = 25 t GS G -- 23.9 -- d(off) (Note 2,3) Turn-Off Fall Time t -- 7.6 -- f Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- 5.8 A S Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode the MOSFET I -- -- 23.2 A SM Forward Current Diode-Source Forward Voltage V = 0V, I = 1A V V -- -- 1 GS S SD Note: 1. Pulse width limited by safe operating area 2. Pulse test: pulse width 300s, duty cycle 2% 3. Switching time is essentially independent of operating temperature. 2/5 Version: B1811