TSM200N03D Taiwan Semiconductor Dual N-Channel MOSFET 30V, 20A, 20m FEATURES KEY PERFORMANCE PARAMETERS Fast switching PARAMETER VALUE UNIT 100% avalanche tested V 30 V DS Pb-free plating Compliant to RoHS directive 2011/65/EU and in R V = 10V 20 DS(on) GS m accordance to WEEE 2002/96/EC (max) V = 4.5V 30 GS Halogen-free according to IEC 61249-2-21 definition Q 4.1 nC g APPLICATIONS Power Supply Motor Control PDFN33 Dual Dual N-Channel MOSFET Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T = 25C 20 C I A (Note 1) D Continuous Drain Current T = 100C 13 C (Note 2) I 80 A Pulsed Drain Current DM Total Power Dissipation T = 25C P 20 W C DTOT (Note 3) E Single Pulsed Avalanche Energy AS 14 mJ (Note 3) I 17 A Single Pulsed Avalanche Current AS - 55 to 150 T ,T C Operating Junction and Storage Temperature Range J STG + THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 6.4 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB in still air JA Document Number:DS P0000166 1 Version: B1710 TSM200N03D Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV GS D DSS 30 -- -- V Gate Threshold Voltage V = V , I = 250A V DS GS D 1.2 1.5 2.5 V GS(TH) Gate Body Leakage V = 20V, V = 0V I GS DS GSS -- -- 100 nA V = 30V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 24V, Tc = 125C -- -- 10 DS V = 10V, I = 10A GS D -- 17 20 Drain-Source On-State Resistance R m DS(on) V = 4.5V, I = 6A GS D -- 23 30 Forward Transconductance V = 5V, I = 6A S DS D g -- 13 -- fs (Note 5) Dynamic Total Gate Charge Q g -- 4.1 -- V = 15V, I = 8A, DS D Gate-Source Charge Q gs -- 1 -- nC V = 4.5V GS Gate-Drain Charge Q -- 2.1 -- gd Input Capacitance C -- 345 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 55 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 32 -- rss (Note 6) Switching Turn-On Delay Time t d(on) -- 2.8 -- Turn-On Rise Time t r -- 7.2 -- V = 15V, I = 1A, DD D ns R =6 Turn-Off Delay Time GEN t d(off) -- 15.8 -- Turn-Off Fall Time t f -- 4.6 -- (Note 4) Source-Drain Diode Maximum Continuous Drain-Source I -- -- 20 A S Diode Forward Current Integral reverse diode in the MOSFET Maximum Pulse Drain-Source I -- -- 80 A SM Diode Forward Current Diode-Source Forward Voltage V = 0V, I = 1A V -- -- 1 V GS S SD Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o L = 0.1mH, I = 17A, V = 25V, R = 25, Starting T = 25 C 3. AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature.