TSM060N03ECP 30V N-Channel Power MOSFET TO-252 Pin Definition: Key Parameter Performance (DPAK) 1. Gate Parameter Value Unit 2. Drain 3. Source V 30 V DS V = 10V GS 6 R (max) m DS(on) V = 4.5V 9 GS Q 11.1 nC g Features Block Diagram Fast switching G-S ESD Protection Diode Embedded Ordering Information Ordering code Package Packing TSM060N03ECP ROG TO-252 2.5kpcs / 13 Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET with ESD protection o Absolute Maximum Ratings (T =25 C unless otherwise noted) C Parameter Symbol Limit Unit 30 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS 70 T =25C A C Continuous Drain Current I D 44 T =100C A C (Note 1) 280 Pulsed Drain Current I A DM (Note 2) Single Pulse Avalanche Energy E 88 mJ AS (Note 2) 42 Single Pulse Avalanche Current I A AS o T =25 C 54 W C Total Power Dissipation P D o Derate above T =25 C 0.43 W/C C Operating Junction Temperature T 150 C J o -55 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit o C/W Thermal Resistance - Junction to Case R 2.3 JC o C/W Thermal Resistance - Junction to Ambient R 62 JA 1/5 Version: B1807 TSM060N03ECP 30V N-Channel Power MOSFET o Electrical Specifications (T =25 C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS V = 10V, I = 20A 4.8 6 -- GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 10A 6.5 9 -- GS D Gate Threshold Voltage V = V , I = 250A DS GS D V 1 1.6 2.5 V GS(TH) V = 30V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 24V, T = 125C -- -- 10 DS J Gate Body Leakage V = 20V, V = 0V I -- -- 10 A GS DS GSS Forward Transconductance V = 10V, I = 10A DS D g -- 12.5 -- S fs Dynamic (Note 3,4) Total Gate Charge Q 11.1 -- -- g V = 15V, I = 20A, (Note 3,4) DS D Gate-Source Charge Q 1.85 -- -- nC gs V = 4.5V GS (Note 3,4) Gate-Drain Charge Q 6.8 gd -- -- Input Capacitance C -- 1210 -- iss V = 25V, V = 0V, DS GS Output Capacitance C 190 -- -- pF oss f = 1MHz Reverse Transfer Capacitance C 100 -- -- rss Gate Resistance f = 1MHz R g -- 2.5 -- Switching (Note 3,4) Turn-On Delay Time t 7.5 -- -- d(on) (Note 3,4) Turn-On Rise Time t 14.5 -- -- r V =15V , V =10V , DD GS ns (Note 3,4) R =3.3, I =-15A G D Turn-Off Delay Time t 35.2 d(off) -- -- (Note 3,4) Turn-Off Fall Time t 9.6 f -- -- Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode 70 I -- -- A S Pulse Drain-Source Diode 280 I -- -- A SM Diode-Source Forward Voltage V = 0V, I = 1A V 1 V GS S SD -- -- Note: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. o 2. V =25V,V =10V,L=0.1mH,I =42A.,R =25,Starting T =25 C DD GS AS G J 3. The data tested by pulsed , pulse width 300s, duty cycle 2% 4. Essentially independent of operating temperature. 2/5 Version: B1807