TSM055N03EPQ56 30V N-Channel MOSFET Key Parameter Performance Pin Definition: PDFN56 1. Source 8. Drain Parameter Value Unit 2. Source 7. Drain V 30 V 3. Source 6. Drain DS 4. Gate 5. Drain 5.5 V = 10V GS R (max) m DS(on) Note: V = 4.5V 8.5 GS MSL 1 (Moisture Sensitivity Level) per J-STD-020 Q 11.1 nC g Ordering Information Block Diagram Part No. Package Packing TSM055N03EPQ56 RLG PDFN56 2.5kpcs / 13 Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET with ESD protection Absolute Maximum Ratings (Tc = 25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T = 25 80 C Continuous Drain Current I A D T = 100 51 C (Note 1) Drain Current-Pulsed I 320 A DM (Note 2) Single Pulse Avalanche Energy E 45 mJ AS Maximum Power Dissipation T = 25 P 74 W C D Storage Temperature Range T -55 to +150 STG Operating Junction Temperature Range T -55 to +150 J Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R 1.7 /W JC Thermal Resistance - Junction to Ambient R 62 /W JA 1/5 Version: B1710 TSM055N03EPQ56 30V N-Channel MOSFET Electrical Specifications (T = 25 unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV GS D DSS 30 -- -- V V = 10V, I = 20A -- 4.5 5.5 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 10A 6.3 8.5 GS D Gate Threshold Voltage V = V , I = 250A V DS GS D GS(TH) 1.2 1.6 2.5 V V = 30V, V = 0V DS GS -- -- 1 A Zero Gate Voltage Drain Current I V = 24V, V = 0V, DSS DS GS -- -- 10 A T = 125 J Gate Body Leakage V = 20V, V = 0V I -- -- 10 A GS DS GSS Dynamic (Note 3,4) Total Gate Charge Q g -- 11.1 -- V = 15V, I = 20A, (Note 3,4) DS D Gate-Source Charge Q gs -- 1.85 -- nC V = 4.5V GS (Note 3,4) Gate-Drain Charge Q -- 6.8 -- gd Input Capacitance C -- 1210 -- iss V = 25V, V = 0V, DS GS Output Capacitance C oss -- 190 -- pF f = 1.0MHz Reverse Transfer Capacitance C -- 100 -- rss Switching (Note 3,4) Turn-On Delay Time t -- 7.5 -- d(on) (Note 3,4) Turn-On Rise Time t r -- 14.5 -- V = 10V, V = 15V, GS DS ns (Note 3,4) R = 3.3, I = 15A Turn-Off Delay Time t -- 35.2 -- G D d(off) (Note 3,4) Turn-Off Fall Time t -- 9.6 -- f Drain-Source Diode Characteristics and Maximum Rating Maximum Continuous Drain-Source I -- -- 80 A S Diode Forward Current Integral reverse diode in the MOSFET Maximum Pulse Drain-Source I -- -- 320 A SM Diode Forward Current Drain-Source Diode Forward V = 0V, I = 1A V -- -- 1 V GS S SD Voltage Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V = 25V, V = 10V, L = 0.1mH,I = 42A, R = 25, Starting T = 25. DD GS AS G J 3. Pulse test: pulse width 300s, duty cycle 2% 4. Essentially independent of operating temperature. 2/5 Version: B1710