TSM05N03CW Taiwan Semiconductor

TSM05N03 30V N-Channel MOSFET SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate V (V) R (m) I (A) DS DS(on) D 2. Drain 3. Source 60 V =10V 5 GS 30 90 V =4.5V 3.8 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM05N03CW RPG SOT-223 2.5Kpcs / 13 Reel N-Channel MOSFET Note: G denotes Halogen Free Product. o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 5 A D Pulsed Drain Current I 20 A DM a,b Continuous Source Current (Diode Conduction) I 1.7 A S o Ta = 25 C 3 Maximum Power Dissipation P W D o Ta = 75 C 1.1 o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit o C/W Junction to Case Thermal Resistance R 15 JC o Junction to Ambient Thermal Resistance (PCB mounted) R 45 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t 5 sec. 1/4 Version: A12 TSM05N03 30V N-Channel MOSFET o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 -- 3 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 30V, V = 0V I -- -- 1.0 A DS GS DSS On-State Drain Current V =5V, V = 10V I 5 -- -- A DS GS D(ON) V = 10V, I = 5A -- 46 60 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 3.8A -- 70 90 GS D Forward Transconductance V = 10V, I = 5A g -- 5 -- S DS D fs Diode Forward Voltage I = 2.5A, V = 0V V -- -- 1.2 V S GS SD b Dynamic Total Gate Charge Q -- 4.2 7 g V = 10V, I = 5A, DS D nC Gate-Source Charge Q -- 1.9 -- gs V = 5V GS Gate-Drain Charge Q -- 1.35 -- gd Input Capacitance C -- 555 -- iss V = 15V, V = 0V, DS GS pF Output Capacitance C -- 120 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 60 -- rss b.c Switching Turn-On Delay Time t -- 4.2 5.5 d(on) V = 10V, R = 15, DD L Turn-On Rise Time t -- 19 25 r I = 1A, V = 10V, nS D GEN Turn-Off Delay Time t -- 13 17 d(off) R = 6 G Turn-Off Fall Time t -- 9 12 f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2/4 Version: A12