X-On Electronics has gained recognition as a prominent supplier of BUK6E3R4-40C,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK6E3R4-40C,127 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK6E3R4-40C,127 NXP

BUK6E3R4-40C,127 electronic component of NXP
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Part No.BUK6E3R4-40C,127
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) I2PAK Rail
Datasheet: BUK6E3R4-40C,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
19: USD 1.821 ea
Line Total: USD 34.6 
Availability - 0
MOQ: 19  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Package Type
Gate-Source Voltage Max
Operating Temperature Classification
Operating Temp Range
Type
Rad Hardened
Pin Count
Drain-Source On-Volt
Number Of Elements
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We are delighted to provide the BUK6E3R4-40C,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK6E3R4-40C,127 and other electronic components in the MOSFETs category and beyond.

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BUK6E3R4-40C N-channel TrenchMOS intermediate level FET Rev. 3 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --40 V DS j j voltage 1 I drain current V =10V T =25C --100A D GS mb see Figure 1 P total power T = 25 C see Figure 2 --204W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 3.05 3.6 m DSon GS D on-state T =25C see Figure 11 j resistanceBUK6E3R4-40C NXP Semiconductors N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =100 A V 40 V --368mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =32V -42 - nC GD D DS V = 10 V see Figure 13 GS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2D Drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6E3R4-40C I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 BUK6E3R4-40C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 14 October 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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