BUK7105-40AIE NXP

BUK7105-40AIE N-channel TrenchPLUS standard level FET Rev. 05 9 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Electrostatically robust due to Reduced component count due to integrated protection diodes integrated current sensor Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant 1.3 Applications Electrical Power Assisted Steering Variable Valve Timing for engines (EPAS) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V =10V T =25C 1 - - 155 A D GS mb see Figure 2 see Figure 3 Static characteristics R drain-source V =10V I =50A -4.5 5 m DSon GS D on-state resistance T = 25 C see Figure 7 j see Figure 8 I /I ratio of drain current T >-55 C T < 175 C 450 500 550 D sense j j to sense current V >10V GS 1 Current is limited by power dissipation chip rating.NXP Semiconductors BUK7105-40AIE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate d mb 2 ISENSE Sense current 3D drain 4 KS Kelvin source g 5S source 3 mb D mounting base connected to 1245 drain s SOT426 I MBL368 sense Kelvin source (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7105-40AIE D2PAK Plastic single-ended surface-mounted package (D2PAK) 5 leads (one SOT426 lead cropped) BUK7105-40AIE 5 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 9 February 2009 2 of 15