BUK7109-75AIE,118 NXP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BUK7109-75AIE N-channel TrenchPLUS standard level FET Rev. 02 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Electrostatically robust due to Reduced component count due to integrated protection diodes integrated current sensor Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant 1.3 Applications Electrical Power Assisted Steering Variable Valve Timing for engines (EPAS) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j I drain current V =10V T =25C 1 - - 120 A D GS mb see Figure 2 see Figure 3 Static characteristics R drain-source V =10V I =50A - 89m DSon GS D on-state resistance T = 25 C see Figure 7 j see Figure 8 I /I ratio of drain current T >-55 C T < 175 C 450 500 550 D sense j j to sense current V >10V GS 1 Current is limited by power dissipation chip rating.