BUK7219-55A NXP

BUK7219-55A N-channel TrenchMOS standard level FET Rev. 02 3 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V =5V T =25C --55 A D GS mb see Figure 1 and 3 P total power T = 25 C see Figure 2 --114 W tot mb dissipation Avalanche ruggedness E non-repetitive I =49 A V 55 V - - 120 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Static characteristics R drain-source V =10V I =25A --38 m DSon GS D on-state resistance T =175 C j see Figure 12 and 13 V =10V I =25A - 1619m GS D T =25C j see Figure 12 and 13BUK7219-55A NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2d drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7219-55A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads (one SOT428 lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage R =20k -55 V DGR GS V gate-source voltage -20 20 V GS I drain current T =100 C V =5V see Figure 1 -39 A D mb GS T =25C V =5V see Figure 1 and 3 -55 A mb GS 1 I peak drain current T =25C t 10 s pulsed see Figure 3 -250 A DM mb p P total power dissipation T =25C see Figure 2 -114 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Avalanche ruggedness E non-repetitive I =49A V 55 V R =50 V =10V -120 mJ DS(AL)S D sup GS GS drain-source avalanche T = 25 C unclamped j(init) energy Source-drain diode I source current T =25C - 55 A S mb I peak source current t 10 s pulsed T =25C - 250 A SM p mb 1 Peak drain current is limited by chip, not package. BUK7219-55A 2 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 3 February 2010 2 of 13