X-On Electronics has gained recognition as a prominent supplier of BUK7227-100B,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7227-100B,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7227-100B,118 Nexperia

BUK7227-100B,118 electronic component of Nexperia
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Part No.BUK7227-100B,118
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 100 V 48A (Tc) 167W (Tc) Surface Mount DPAK
Datasheet: BUK7227-100B,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2004 ea
Line Total: USD 1.2 
Availability - 1390
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1390
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2004
10 : USD 1.063
30 : USD 0.977
100 : USD 0.7252
500 : USD 0.687
1000 : USD 0.6699

1644
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 1.529
10 : USD 1.166
100 : USD 0.8756
500 : USD 0.7359
1000 : USD 0.7106
2500 : USD 0.7106

5693
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 79
Multiples : 1
79 : USD 1.567

2418
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 9
Multiples : 1
9 : USD 1.5868
100 : USD 1.1319
500 : USD 0.9186
1000 : USD 0.8557
2500 : USD 0.8482

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BUK7227-100B,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7227-100B,118 and other electronic components in the MOSFETs category and beyond.

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BUK7227-100B N-channel TrenchMOS standard level FET Rev. 02 17 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 185 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T 25 C T 185 C - - 100 V V DS j j drain current V =10V T =25C --48 A I D GS mb see Figure 1 see Figure 3 P total power T =25C see Figure 2 --167W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 2327m DSon GS D on-state resistance T =25C see Figure 11 j see Figure 12 Avalanche ruggedness E non-repetitive I =48A V 100 V --145mJ DS(AL)S D sup drain-source R =50 V =10V GS GS T = 25 C unclamped avalanche energy j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -13 -nC GD GS D V =80V T =25C DS j see Figure 13BUK7227-100B Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 1 It is not possible to make a connection to pin 2 of the SOT428 package. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7227-100B DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK7227-100B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 17 February 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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