BUK7277-55A NXP

BUK7277-55A N-channel TrenchMOS standard level FET 12 June 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V = 10 V T = 25 C Fig. 2 Fig. 3 - - 18 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 51 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 175 C - - 154 m DSon GS D j resistance Fig. 12 Fig. 13 V = 10 V I = 10 A T = 25 C - 65 77 m GS D j Fig. 12 Fig. 13 Avalanche ruggedness E non-repetitive drain- I = 6 A V 55 V R = 50 - - 36 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Scan or click this QR code to view the latest information for this product DPAKNXP Semiconductors BUK7277-55A N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 DPAK (SOT428) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7277-55A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK7277-55A BUK7277-55A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage R = 20 k - 55 V DGR GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 51 W tot mb I drain current T = 100 C V = 10 V Fig. 2 - 13 A D mb GS T = 25 C V = 10 V Fig. 2 Fig. 3 - 18 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 1 - 73 A DM mb p T storage temperature -55 175 C stg T junction temperature -55 175 C j BUK7277-55A All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 12 June 2014 2 / 12