BUK7526-100B,127 NXP

BUK7526-100B N-channel TrenchMOS standard level FET 25 February 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 2 Fig. 3 - - 49 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 157 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 22 26 m DSon GS D j resistance Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 80 V - 13 - nC GD GS D DS T = 25 C Fig. 13 j Avalanche ruggedness E non-repetitive drain- I = 49 A V 100 V R = 50 - - 144 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors BUK7526-100B N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7526-100B TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78A hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code BUK7526-100B BUK7526-100B 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 157 W tot mb I drain current T = 25 C V = 10 V Fig. 2 Fig. 3 - 49 A D mb GS T = 100 C V = 10 V Fig. 2 - 34 A mb GS BUK7526-100B All information provided in this document is subject to legal disclaimers. NXP N.V. 2014. All rights reserved Product data sheet 25 February 2014 2 / 12