BUK7540-100A,127 NXP

BUK7540-100A N-channel TrenchMOS standard level FET Rev. 2 20 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T=25C --37 A D mb P total power dissipation - - 138 W tot Static characteristics drain-source on-state V =10V I =40A - 3040m R DSon GS D resistance T =25C j Avalanche ruggedness E non-repetitive I =26 A V 25 V --31 mJ DS(AL)S D sup drain-source avalanche R =50 V =5V GS GS T = 25 C unclamped energy j(init) TO-220ABBUK7540-100A NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7540-100A TO-220AB plastic single-ended package heatsink mounted SOT78A 1 mounting hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R =20k - 100 V DGR GS V gate-source voltage -20 20 V GS I drain current T =100 C - 26 A D mb T =25C - 37 A mb I peak drain current T = 25 C pulsed - 149 A DM mb P total power dissipation T = 25 C - 138 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 37 A S mb I peak source current pulsed T = 25 C - 149 A SM mb Avalanche ruggedness E non-repetitive drain-source I =26A V 25 V R =50 -31 mJ DS(AL)S D sup GS avalanche energy V =5V T = 25 C unclamped GS j(init) BUK7540-100A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 20 April 2011 2 of 12