BUK7575-55A,127 NXP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BUK7575-55A N-channel TrenchMOS standard level FET Rev. 02 4 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --55 V DS j j voltage I drain current V =10V T =25C --20.3A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --62 W tot mb dissipation Static characteristics R drain-source V =10V I =10A --150m DSon GS D on-state T = 175 C see Figure 12 j resistance see Figure 13 V =10V I =10A - 6475m GS D T =25C see Figure 12 j see Figure 13 Avalanche ruggedness E non-repetitive I =11A V 55 V --30.3mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) TO-220AB