BUK7610-100B NXP

BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low on-state resistance Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 10 V T = 25 C Fig. 1 Fig. 3 1 - - 75 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 300 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 8.6 10 m DSon GS D j resistance Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 80 V - 22 - nC GD GS D DS T = 25 C Fig. 13 j Avalanche ruggedness E non-repetitive drain- I = 75 A V 100 V R = 50 - - 629 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Scan or click this QR code to view the latest information for this productNXP Semiconductors BUK7610-100B N-channel TrenchMOS standard level FET 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 G gate 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7610-100B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK7610-100B BUK7610-100B 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage -20 20 V GS I drain current T = 25 C V = 10 V Fig. 1 Fig. 3 1 - 110 A D mb GS 2 - 75 A T = 100 C V = 10 V Fig. 1 2 - 75 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 438 A DM mb p BUK7610-100B All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 6 July 2012 2 / 12