BUK763R4-30B NXP

BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 2 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard level gate drive sources 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current V =10V T =25C -- 75 A D GS mb see Figure 1 see Figure 4 P total power dissipation T = 25 C see Figure 2 -- 255W tot mb Static characteristics R drain-source on-state V =10V I =25A -2.9 3.4 m DSon GS D resistance T =25C j see Figure 12 see Figure 13 Avalanche ruggedness E non-repetitive I =75A V 30 V -- 1.3 J DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) 1 Continuous current is limited by package. D2PAKBUK763R4-30B NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK763R4-30B D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) BUK763R4-30B All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 21 April 2011 2 of 14