X-On Electronics has gained recognition as a prominent supplier of BUK764R0-55B,118 MOSFET across the USA, India, Europe, Australia, and various other global locations. BUK764R0-55B,118 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BUK764R0-55B,118 Nexperia

BUK764R0-55B,118 electronic component of Nexperia
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Part No.BUK764R0-55B,118
Manufacturer: Nexperia
Category: MOSFET
Description: Trans MOSFET N-CH 55V 193A Automotive 3-Pin(2+Tab) D2PAK T/R
Datasheet: BUK764R0-55B,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.875 ea
Line Total: USD 2.88

Availability - 753
Ship by Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
753
Ship by Thu. 18 Jul to Mon. 22 Jul
MOQ : 1
Multiples : 1
1 : USD 2.875
10 : USD 2.438
25 : USD 2.3345
100 : USD 2.0585
250 : USD 1.9435
500 : USD 1.8515
800 : USD 1.6445
2400 : USD 1.6445
4800 : USD 1.564

29488
Ship by Fri. 12 Jul to Thu. 18 Jul
MOQ : 800
Multiples : 800
800 : USD 1.82

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Drain Current Max
Frequency Max
Gate-Source Voltage Max
Output Power Max
Power Dissipation
Mounting
Noise Figure
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain Efficiency
Drain-Source On-Volt
Power Gain
Rad Hardened
Continuous Drain Current
Configuration
Height
Length
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BUK764R0-55B,118 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK764R0-55B,118 and other electronic components in the MOSFET category and beyond.

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BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j 1 I drain current V =10V T =25C --75 A D GS mb see Figure 1 see Figure 4 P total power T =25C see Figure 2 - - 300 W tot mb dissipation Static characteristics R drain-source on-state V =10V I =25A -3.4 4 m DSon GS D resistance T =25 C see Figure 7 j see Figure 12BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 55 V --1.2 J DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -25 -nC GD GS D V =44V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK764R0-55B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK764R0-55B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 5 22 April 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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