BUK7909-75AIE,127 NXP

BUK7909-75AIE N-channel TrenchPLUS standard level FET Rev. 02 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Electrostatically robust due to Reduced component count due to integrated protection diodes integrated current sensor Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant 1.3 Applications Electrical Power Assisted Steering Variable Valve Timing for engines (EPAS) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j I drain current V =10V T =25C 1 - - 120 A D GS mb see Figure 2 see Figure 3 Static characteristics R drain-source V =10V I =50A - 89m DSon GS D on-state resistance T = 25 C see Figure 7 j see Figure 8 I /I ratio of drain current T >-55 C T < 175 C 450 500 550 D sense j j to sense current V >10V GS 1 Current is limited by power dissipation chip rating.Nexperia BUK7909-75AIE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate d mb 2 ISENSE sense current 3D drain 4 KS Kelvin source g 5S source mb D mounting base connected to drain s I MBL368 sense Kelvin source 13245 SOT263B (TO-220) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7909-75AIE TO-220 plastic single-ended package heatsink mounted 1 mounting hole 5-lead SOT263B TO-220 Nexperia B.V. 2017. All rights reserved BUK7909-75AIE 2 Product data sheet Rev. 02 17 February 2009 2 of 13