BUK7Y13-40B,115 Nexperia

BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits 175 C rated Q101 compliant Suitable for standard level gate drive Suitable for thermally demanding sources environments due to 175 C rating 1.3 Applications 12 V loads Air bag Automotive ABS systems Automotive transmission control Fuel pump and injection Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C --40 V DS j j I drain current V =10V T =25 C --58 A D GS mb see Figure 1 and 4 P total power dissipation T =25 C see Figure 2 --85 W tot mb Dynamic characteristics Q gate-drain charge I =10 A V =32V -5 -nC GD D DS V = 10 V see Figure 14 GS Static characteristics R drain-source on-state V =10V I =25A -11 13 m DSon GS D resistance T =25 C see Figure 13 and j 12 Avalanche ruggedness E non-repetitive I =58 A V 40 V --85 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T =25 C unclamped j(init)Nexperia BUK7Y13-40B N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1, 2, 3 S source mb D 4 G gate mb D mounting base G connected to drain mbb076 S 1234 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y13-40B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C-40V DS j j V drain-gate voltage R =20k -40 V DGR GS V gate-source voltage 20 20 V GS I drain current T =25 C V = 10 V see Figure 1 and 4 -58 A D mb GS T = 175 C V = 10 V see Figure 1 -41 A mb GS I peak drain current T =25 C t 10 s pulsed see Figure 4 - 234 A DM mb p P total power dissipation T =25 C see Figure 2 -85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Avalanche ruggedness E non-repetitive I =58A V 40 V R =50 -85 mJ DS(AL)S D sup GS drain-source avalanche V =10 V T =25 C unclamped GS j(init) energy 1 2 E repetitive drain-source see Figure 3 --J DS(AL)R 3 avalanche energy Source-drain diode I source current T =25 C-58A S mb I peak source current t 10 s pulsed T =25 C - 234 A SM p mb 1 Single-pulse avalanche rating limited by maximum junction temperature of 175 C. 2 Repetitive avalanche rating limited by an average junction temperature of 170 C. 3 Refer to application note AN10273 for further information. BUK7Y13-40B 3 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 26 May 2008 2 of 12