BUK9226-75A,118 Nexperia

BUK9226-75A N-channel TrenchMOS logic level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --75 V DS j j I drain current V =5V T =25C --45 A D GS mb see Figure 1 see Figure 3 P total power dissipation T = 25 C see Figure 2 --114W tot mb Static characteristics R drain-source on-state V =4.5 V I =25A T=25C --29 m DSon GS D j resistance V =10V I =25A T = 25 C - 20.9 24.6 m GS D j V =5V I =25A T =25C -22.126 m GS D j see Figure 13 see Figure 12 Avalanche ruggedness E non-repetitive I =49A V 75 V --120mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init)BUK9226-75A Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9226-75A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK9226-75A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 27 January 2011 2 of 14