BUK9275-100A,118 Nexperia

BUK9275-100A N-channel TrenchMOS logic level FET Rev. 03 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 100 V DS j j voltage I drain current V =5V T =25C --21.7A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --88 W tot mb dissipation Static characteristics R drain-source V =4.5 V I =10A --84 m DSon GS D on-state T =25C j resistance V =10V I =10A - 6272m GS D T =25C j V =5V I =10A - 6475m GS D T =25C j see Figure 12 see Figure 13 Avalanche ruggedness E non-repetitive I =14A V 100 V --100mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init)BUK9275-100A Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9275-100A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j V drain-gate voltage R =20k - - 100 V DGR GS V gate-source voltage -10 - 10 V GS I drain current T =25C V =5V see Figure 1 - - 21.7 A D mb GS see Figure 3 T =100 C V =5V see Figure 1 - - 15.3 A mb GS 1 I peak drain current T =25C t 10 s pulsed --87 A DM mb p see Figure 3 P total power dissipation T =25C see Figure 2 --88 W tot mb T storage temperature -55 - 175 C stg T junction temperature -55 - 175 C j V peak gate-source pulsed t 50 s -15 - 15 V GSM p voltage Source-drain diode I source current T = 25 C - - 21.7 A S mb I peak source current t 10 s pulsed T=25C --87 A SM p mb Avalanche ruggedness E non-repetitive I =14A V 100 V R =50 - - 100 mJ DS(AL)S D sup GS drain-source V =5V T = 25 C unclamped GS j(init) avalanche energy BUK9275-100A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 15 June 2010 2 of 13