BUK9620-100B,118 NXP

BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC-Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V =5V T =25C --63 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 203 W tot mb dissipation Static characteristics R drain-source V = 4.5 V I =25A - 16.4 22.3 m DSon GS D on-state resistance T = 25 C see Figure 11 j see Figure 12 V =5V I =25A - 16.2 20 m GS D T = 25 C see Figure 12 j see Figure 11 Avalanche ruggedness E non-repetitive I =63 A V 100 V - - 222 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init)Nexperia BUK9620-100B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9620-100B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R =20k -100 V DGR GS V gate-source voltage -15 15 V GS I drain current T =25C V =5V see Figure 1 see Figure 3 -63 A D mb GS T =100 C V =5V see Figure 1 -45 A mb GS I peak drain current T =25C t 10 s pulsed see Figure 3 -253 A DM mb p P total power dissipation T =25C see Figure 2 -203 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 63 A S mb I peak source current t 10 s pulsed T =25C - 253 A SM p mb Avalanche ruggedness E non-repetitive I =63A V 100 V R =50 V =5V -222 mJ DS(AL)S D sup GS GS drain-source avalanche T = 25 C unclamped j(init) energy Nexperia B.V. 2017. All rights reserved BUK9620-100B 2 Product data sheet Rev. 02 6 May 2009 2 of 12