BUK9628-55A NXP

BUK9628-55A N-channel TrenchMOS logic level FET Rev. 02 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V and 24 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V =5V T =25C --42 A D GS mb see Figure 1 see Figure 3 P total power T =25C see Figure 2 --99 W tot mb dissipation Static characteristics R drain-source on-state V =10V I =15A T = 25 C - 22 25 m DSon GS D j resistance V =4.5 V I =15A T=25C --30 m GS D j V =5V I =15 A T =25C - 2428m GS D j see Figure 12 see Figure 13 Avalanche ruggedness E non-repetitive I =34A V 55 V --57.8mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) D2PAKBUK9628-55A NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9628-55A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK9628-55A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 17 February 2011 2 of 14