BUK9635-55A NXP

BUK9635-55A N-channel TrenchMOS logic level FET Rev. 2 21 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current T =25C - - 34 A D mb P total power dissipation - - 85 W tot Static characteristics drain-source on-state V =10V I =25A -24 32 m R DSon GS D resistance T =25C j V =5V I =25A -26 35 m GS D T =25C j Avalanche ruggedness E non-repetitive I =14A V 25 V -- 49 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T =25C j(init) unclamped D2PAKBUK9635-55A NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9635-55A D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage R =20k -55 V DGR GS V gate-source voltage -10 10 V GS I drain current T =100 C - 24 A D mb T =25C - 34 A mb I peak drain current T = 25 C pulsed - 133 A DM mb P total power dissipation T =25C - 85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j V peak gate-source voltage pulsed t 50 s -15 15 V GSM p Source-drain diode I source current T =25C - 34 A S mb I peak source current pulsed T = 25 C - 133 A SM mb Avalanche ruggedness E non-repetitive drain-source I =14A V 25 V R =50 -49 mJ DS(AL)S D sup GS avalanche energy V =5V T = 25 C unclamped GS j(init) BUK9635-55A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 21 April 2011 2 of 13