X-On Electronics has gained recognition as a prominent supplier of BUK963R2-40B MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK963R2-40B MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK963R2-40B NXP

BUK963R2-40B electronic component of NXP
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Part No.BUK963R2-40B
Manufacturer: NXP
Category: MOSFETs
Description: Trans MOSFET N-CH 40V 222A Automotive 3-Pin(2+Tab) D2PAK
Datasheet: BUK963R2-40B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9: USD 3.7422 ea
Line Total: USD 33.68 
Availability - 0
MOQ: 9  Multiples: 1
Pack Size: 1
   
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Transistor Polarity
Mounting Style
Channel Mode
Pd Power Dissipation
Gate Source Voltage Max
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Number Of Elements
Operating Temperature Classification
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Rad Hardened
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We are delighted to provide the BUK963R2-40B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK963R2-40B and other electronic components in the MOSFETs category and beyond.

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BUK963R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 5 V T = 25 C Fig. 2 Fig. 3 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 300 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.4 2.8 m DSon GS D j resistance V = 5 V I = 25 A T = 25 C - 2.7 3.2 m GS D j Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 32 V - 37 - nC GD GS D DS T = 25 C Fig. 13 j Scan or click this QR code to view the latest information for this product D2PAKNXP Semiconductors BUK963R2-40B N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit Avalanche ruugedness E non-repetitive drain- I = 100 A V 40 V R = 50 - - 1.2 J DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy 1 All individual parts of device must be 175 C to achieve maximum current rating. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK963R2-40B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK963R2-40B BUK963R2-40B 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k - 40 V DGR GS BUK963R2-40B All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 13 March 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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